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Yoshinao Harada

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2001
2EEKoji Eriguchi, Yoshinao Harada, Masaaki Niwa: Effects of base layer thickness on reliability of CVD Si3N4 stack gate dielectrics. Microelectronics Reliability 41(4): 587-595 (2001)
1EETakayuki Yamada, Masaru Moriwaki, Yoshinao Harada, Shinji Fujii, Koji Eriguchi: Effects of the sputtering deposition process of metal gate electrode on the gate dielectric characteristics. Microelectronics Reliability 41(5): 697-704 (2001)

Coauthor Index

1Koji Eriguchi [1] [2]
2Shinji Fujii [1]
3Masaru Moriwaki [1]
4Masaaki Niwa [2]
5Takayuki Yamada [1]

Copyright © Sun May 17 03:24:02 2009 by Michael Ley (ley@uni-trier.de)