| 2002 |
|---|
| 4 | EE | Lingfeng Mao,
Heqiu Zhang,
Changhua Tan,
Mingzhen Xu:
The effect of transition region on the direct tunneling current and Fowler-Nordheim tunneling current oscillations in ultrathin MOS structures.
Microelectronics Reliability 42(2): 175-181 (2002) |
| 3 | EE | Lingfeng Mao,
Changhua Tan,
Mingzhen Xu:
Erratum to "The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures" [Microelectronics Reliability 2001;41: 927-931].
Microelectronics Reliability 42(6): 991 (2002) |
| 2001 |
|---|
| 2 | EE | Lingfeng Mao,
Yao Yang,
Jian-Lin Wei,
Heqiu Zhang,
Mingzhen Xu,
Changhua Tan:
Effect of SiO2/Si interface roughness on gate current.
Microelectronics Reliability 41(11): 1903-1907 (2001) |
| 1 | EE | Lingfeng Mao,
Changhua Tan,
Mingzhen Xu:
The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures.
Microelectronics Reliability 41(6): 927-931 (2001) |
