| 2005 |
|---|
| 6 | EE | Nian Zhan,
M. C. Poon,
Hei Wong,
K. L. Ng,
C. W. Kok:
Dielectric breakdown characteristics and interface trapping of hafnium oxide films.
Microelectronics Journal 36(1): 29-33 (2005) |
| 2003 |
|---|
| 5 | EE | Jackie Chan,
Hei Wong,
M. C. Poon,
C. W. Kok:
Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride.
Microelectronics Reliability 43(4): 611-616 (2003) |
| 4 | EE | K. L. Ng,
Nian Zhan,
C. W. Kok,
M. C. Poon,
Hei Wong:
Electrical characterization of the hafnium oxide prepared by direct sputtering of Hf in oxygen with rapid thermal annealing.
Microelectronics Reliability 43(8): 1289-1293 (2003) |
| 2002 |
|---|
| 3 | EE | P. G. Han,
Hei Wong,
Andy H. P. Chan,
M. C. Poon:
A novel approach for fabricating light-emitting porous polysilicon films.
Microelectronics Reliability 42(6): 929-933 (2002) |
| 2001 |
|---|
| 2 | EE | M. C. Poon,
Y. Gao,
T. C. W. Kok,
A. M. Myasnikov,
Hei Wong:
SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer.
Microelectronics Reliability 41(12): 2071-2074 (2001) |
| 1 | EE | Hei Wong,
P. G. Han,
M. C. Poon,
Y. Gao:
Investigation of the surface silica layer on porous poly-Si thin films.
Microelectronics Reliability 41(2): 179-184 (2001) |
