2001 | ||
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1 | M. Fadlallah, A. Szewczyk, C. Giannakopoulos, B. Cretu, F. Monsieur, T. Devoivre, J. Jomaah, G. Ghibaudo: Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics. Microelectronics Reliability 41(9-10): 1361-1366 (2001) |
1 | B. Cretu | [1] |
2 | T. Devoivre | [1] |
3 | M. Fadlallah | [1] |
4 | G. Ghibaudo | [1] |
5 | J. Jomaah | [1] |
6 | F. Monsieur | [1] |
7 | A. Szewczyk | [1] |