| |
| 2001 | ||
|---|---|---|
| 1 | M. Fadlallah, A. Szewczyk, C. Giannakopoulos, B. Cretu, F. Monsieur, T. Devoivre, J. Jomaah, G. Ghibaudo: Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics. Microelectronics Reliability 41(9-10): 1361-1366 (2001) | |
| 1 | B. Cretu | [1] |
| 2 | T. Devoivre | [1] |
| 3 | M. Fadlallah | [1] |
| 4 | G. Ghibaudo | [1] |
| 5 | C. Giannakopoulos | [1] |
| 6 | J. Jomaah | [1] |
| 7 | F. Monsieur | [1] |