2003 |
8 | EE | S. Aresu,
Ward De Ceuninck,
G. Knuyt,
J. Mertens,
J. Manca,
Luc De Schepper,
Robin Degraeve,
Ben Kaczer,
Marc D'Olieslaeger,
Jan D'Haen:
A new method for the analysis of high-resolution SILC data.
Microelectronics Reliability 43(9-11): 1483-1488 (2003) |
7 | EE | P. Soussan,
G. Lekens,
R. Dreesen,
Ward De Ceuninck,
E. Beyne:
Advantage of In-situ over Ex-situ techniques as reliability tool: Aging kinetics of Imec's MCM-D discrete passives devices.
Microelectronics Reliability 43(9-11): 1785-1790 (2003) |
2002 |
6 | EE | L. Tielemans,
R. Rongen,
Ward De Ceuninck:
How reliable are reliability tests?
Microelectronics Reliability 42(9-11): 1339-1345 (2002) |
5 | EE | R. Petersen,
Ward De Ceuninck,
Jan D'Haen,
Marc D'Olieslaeger,
Luc De Schepper,
O. Vendier,
H. Blanck,
D. Pons:
Exploring the limits of Arrhenius-based life testing with heterojunction bipolar transistor technology.
Microelectronics Reliability 42(9-11): 1359-1363 (2002) |
4 | EE | E. Andries,
R. Dreesen,
K. Croes,
Ward De Ceuninck,
Luc De Schepper,
Guido Groeseneken,
K. F. Lo,
Marc D'Olieslaeger,
Jan D'Haen:
Statistical aspects of the degradation of LDD nMOSFETs.
Microelectronics Reliability 42(9-11): 1409-1413 (2002) |
3 | EE | S. Aresu,
Ward De Ceuninck,
R. Dreesen,
K. Croes,
E. Andries,
J. Manca,
Luc De Schepper,
Robin Degraeve,
Ben Kaczer,
Marc D'Olieslaeger:
High-resolution SILC measurements of thin SiO2 at ultra low voltages.
Microelectronics Reliability 42(9-11): 1485-1489 (2002) |
2001 |
2 | EE | R. Dreesen,
K. Croes,
J. Manca,
Ward De Ceuninck,
Luc De Schepper,
A. Pergoot,
Guido Groeseneken:
A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation.
Microelectronics Reliability 41(3): 437-443 (2001) |
1 | | K. Croes,
R. Dreesen,
J. Manca,
Ward De Ceuninck,
Luc De Schepper,
L. Tielemans,
P. van Der Wel:
High-resolution in-situ of gold electromigration: test time reduction.
Microelectronics Reliability 41(9-10): 1439-1442 (2001) |