| 2006 |
|---|
| 6 | EE | F. J. García Sánchez,
Adelmo Ortiz-Conde,
J. Muci:
Understanding threshold voltage in undoped-body MOSFETs: An appraisal of various criteria.
Microelectronics Reliability 46(5-6): 731-742 (2006) |
| 2002 |
|---|
| 5 | EE | Xiaofang Gao,
Juin J. Liou,
Joe Bernier,
Gregg Croft,
Adelmo Ortiz-Conde:
Implementation of a comprehensive and robust MOSFET model in cadence SPICE for ESD applications.
IEEE Trans. on CAD of Integrated Circuits and Systems 21(12): 1497-1502 (2002) |
| 4 | EE | Rodolfo Quintero,
Antonio Cerdeira,
Adelmo Ortiz-Conde:
Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors.
Microelectronics Reliability 42(1): 67-76 (2002) |
| 3 | EE | Juin J. Liou,
R. Shireen,
Adelmo Ortiz-Conde,
F. J. García Sánchez,
Antonio Cerdeira,
Xiaofang Gao,
Xuecheng Zou,
C. S. Ho:
Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs.
Microelectronics Reliability 42(3): 343-347 (2002) |
| 2 | EE | Adelmo Ortiz-Conde,
F. J. García Sánchez,
Juin J. Liou,
Antonio Cerdeira,
Magali Estrada,
Y. Yue:
A review of recent MOSFET threshold voltage extraction methods.
Microelectronics Reliability 42(4-5): 583-596 (2002) |
| 2001 |
|---|
| 1 | EE | Magali Estrada,
Antonio Cerdeira,
Adelmo Ortiz-Conde,
Francisco García:
Determination of trap cross-section in a-Si: H p-i-n diodes parameters using simulation and parameter extraction.
Microelectronics Reliability 41(4): 605-610 (2001) |
