Massimo V. Fischetti

2006
5	EE	Dragica Vasileska, Santhosh Krishnan, Massimo V. Fischetti: Examining Performance Enhancement of p-Channel Strained-SiGe MOSFET Devices. Numerical Methods and Applications 2006: 189-196
4	EE	Wilfried Haensch, Edward J. Nowak, Robert H. Dennard, Paul M. Solomon, Andres Bryant, Omer H. Dokumaci, Arvind Kumar, Xinlin Wang, Jeffrey B. Johnson, Massimo V. Fischetti: Silicon CMOS devices beyond scaling. IBM Journal of Research and Development 50(4-5): 339-362 (2006)
2005
3	EE	Santhosh Krishnan, Dragica Vasileska, Massimo V. Fischetti: Hole transport in p-channel Si MOSFETs. Microelectronics Journal 36(3-6): 323-326 (2005)
2001
2		J. C. Tsang, Massimo V. Fischetti: Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies. Microelectronics Reliability 41(9-10): 1465-1470 (2001)
1992
1		Wai Lee, Steven E. Laux, Massimo V. Fischetti, Giorgio Baccarani, Antonio Gnudi, Johannes M. C. (Hans) Stork, Jack A. Mandelman, Emmanuel F. Crabbé, Matthew R. Wordeman, Farouk Odeh: Numerical modeling of advanced semiconductor devices. IBM Journal of Research and Development 36(2): 208-232 (1992)

Coauthor Index

1	Giorgio Baccarani	[1]
2	Andres Bryant	[4]
3	Emmanuel F. Crabbé	[1]
4	Robert H. Dennard	[4]
5	Omer H. Dokumaci	[4]
6	Antonio Gnudi	[1]
7	Wilfried Haensch	[4]
8	Jeffrey B. Johnson	[4]
9	Santhosh Krishnan	[3] [5]
10	Arvind Kumar	[4]
11	Steven E. Laux	[1]
12	Wai Lee	[1]
13	Jack A. Mandelman	[1]
14	Edward J. Nowak	[4]
15	Farouk Odeh	[1]
16	Paul M. Solomon	[4]
17	Johannes M. C. (Hans) Stork	[1]
18	J. C. Tsang	[2]
19	Dragica Vasileska	[3] [5]
20	Xinlin Wang	[4]
21	Matthew R. Wordeman	[1]

Colors in the list of coauthors