| |
| 2002 | ||
|---|---|---|
| 2 | EE | Lingfeng Mao, Heqiu Zhang, Changhua Tan, Mingzhen Xu: The effect of transition region on the direct tunneling current and Fowler-Nordheim tunneling current oscillations in ultrathin MOS structures. Microelectronics Reliability 42(2): 175-181 (2002) |
| 2001 | ||
| 1 | EE | Lingfeng Mao, Yao Yang, Jian-Lin Wei, Heqiu Zhang, Mingzhen Xu, Changhua Tan: Effect of SiO2/Si interface roughness on gate current. Microelectronics Reliability 41(11): 1903-1907 (2001) |
| 1 | Lingfeng Mao | [1] [2] |
| 2 | Changhua Tan | [1] [2] |
| 3 | Jian-Lin Wei | [1] |
| 4 | Mingzhen Xu | [1] [2] |
| 5 | Yao Yang | [1] |