2008 |
34 | EE | Aditya Bansal,
Rama N. Singh,
Saibal Mukhopadhyay,
Geng Han,
Fook-Luen Heng,
Ching-Te Chuang:
Pre-Si estimation and compensation of SRAM layout deficiencies to achieve target performance and yield.
ICCD 2008: 457-462 |
33 | EE | Saibal Mukhopadhyay,
Rahul M. Rao,
Jae-Joon Kim,
Ching-Te Chuang:
Capacitive coupling based transient negative bit-line voltage (Tran-NBL) scheme for improving write-ability of SRAM design in nanometer technologies.
ISCAS 2008: 384-387 |
32 | EE | Saibal Mukhopadhyay,
Rajiv V. Joshi,
Keunwoo Kim,
Ching-Te Chuang:
Variability Analysis for sub-100nm PD/SOI Sense-Amplifier.
ISQED 2008: 488-491 |
31 | EE | Amlan Ghosh,
Rahul M. Rao,
Ching-Te Chuang,
Richard B. Brown:
On-Chip Process Variation Detection and Compensation Using Delay and Slew-Rate Monitoring Circuits.
ISQED 2008: 815-820 |
30 | EE | Aditya Bansal,
Jae-Joon Kim,
Keunwoo Kim,
Saibal Mukhopadhyay,
Ching-Te Chuang,
Kaushik Roy:
Optimal Dual-VT Design in Sub-100 Nanometer PDSOI and Double-Gate Technologies.
VLSI Design 2008: 125-130 |
29 | EE | Amlan Ghosh,
Rahul M. Rao,
Jae-Joon Kim,
Ching-Te Chuang,
Richard B. Brown:
On-Chip Process Variation Detection Using Slew-Rate Monitoring Circuit.
VLSI Design 2008: 143-149 |
28 | EE | Niladri Narayan Mojumder,
Saibal Mukhopadhyay,
Jae-Joon Kim,
Ching-Te Chuang,
Kaushik Roy:
Design and Analysis of a Self-Repairing SRAM with On-Chip Monitor and Compensation Circuitry.
VTS 2008: 101-106 |
27 | EE | Jente B. Kuang,
Keunwoo Kim,
Ching-Te Chuang,
Hung C. Ngo,
F. H. Gebara,
Kevin J. Nowka:
Circuit Techniques Utilizing Independent Gate Control in Double-Gate Technologies.
IEEE Trans. VLSI Syst. 16(12): 1657-1665 (2008) |
2007 |
26 | EE | Saibal Mukhopadhyay,
Keunwoo Kim,
Ching-Te Chuang:
Design and analysis of Thin-BOX FD/SOI devices for low-power and stable SRAM in sub-50nm technologies.
ISLPED 2007: 20-25 |
25 | EE | Rajiv V. Joshi,
Rouwaida Kanj,
Keunwoo Kim,
Richard Q. Williams,
Ching-Te Chuang:
A floating-body dynamic supply boosting technique for low-voltage sram in nanoscale PD/SOI CMOS technologies.
ISLPED 2007: 8-13 |
24 | EE | Jie Deng,
Keunwoo Kim,
Ching-Te Chuang,
H.-S. Philip Wong:
Device Footprint Scaling for Ultra Thin Body Fully Depleted SOI.
ISQED 2007: 145-152 |
23 | EE | Rajiv V. Joshi,
Keunwoo Kim,
Richard Q. Williams,
Edward J. Nowak,
Ching-Te Chuang:
A High-Performance, Low Leakage, and Stable SRAM Row-Based Back-Gate Biasing Scheme in FinFET Technology.
VLSI Design 2007: 665-672 |
22 | EE | Saibal Mukhopadhyay,
Keunwoo Kim,
Jae-Joon Kim,
Shih-Hsien Lo,
Rajiv V. Joshi,
Ching-Te Chuang,
Kaushik Roy:
Estimation of gate-to-channel tunneling current in ultra-thin oxide sub-50nm double gate devices.
Microelectronics Journal 38(8-9): 931-941 (2007) |
2006 |
21 | EE | Koushik K. Das,
Shih-Hsien Lo,
Ching-Te Chuang:
High Performance MTCMOS Technique for Leakage Reduction in Hybrid SOI-Epitaxial Technologies with Enhanced-Mobility PFET Header.
VLSI Design 2006: 758-761 |
20 | EE | Saibal Mukhopadhyay,
Keunwoo Kim,
Ching-Te Chuang,
Kaushik Roy:
Modeling and Analysis of Leakage Currents in Double-Gate Technologies.
IEEE Trans. on CAD of Integrated Circuits and Systems 25(10): 2052-2061 (2006) |
2005 |
19 | EE | Saibal Mukhopadhyay,
Keunwoo Kim,
Ching-Te Chuang,
Kaushik Roy:
Modeling and analysis of total leakage currents in nanoscale double gate devices and circuits.
ISLPED 2005: 8-13 |
18 | EE | Saibal Mukhopadhyay,
Keunwoo Kim,
Jae-Joon Kim,
Shih-Hsien Lo,
Rajiv V. Joshi,
Ching-Te Chuang,
Kaushik Roy:
Modeling and Analysis of Gate Leakage in Ultra-thin Oxide Sub-50nm Double Gate Devices and Circuits.
ISQED 2005: 410-415 |
17 | EE | Rajiv V. Joshi,
S. S. Kang,
N. Zamdmar,
A. Mocuta,
Ching-Te Chuang,
J. A. Pascual-Gutiérrez:
Direct Temperature Measurement for VLSI Circuits and 3-D Modeling of Self-Heating in Sub-0.13 mum SOI Technologies.
VLSI Design 2005: 697-702 |
2004 |
16 | EE | Keunwoo Kim,
Koushik K. Das,
Rajiv V. Joshi,
Ching-Te Chuang:
Nanoscale CMOS circuit leakage power reduction by double-gate device.
ISLPED 2004: 102-107 |
15 | EE | Rajiv V. Joshi,
K. Kroell,
Ching-Te Chuang:
A Novel Technique For Steady State Analysis For VLSI Circuits In Partially Depleted SOI.
VLSI Design 2004: 832- |
2003 |
14 | EE | Kerry Bernstein,
Ching-Te Chuang,
Rajiv V. Joshi,
Ruchir Puri:
Design and CAD Challenges in sub-90nm CMOS Technologies.
ICCAD 2003: 129-137 |
13 | EE | Koushik K. Das,
Rajiv V. Joshi,
Ching-Te Chuang,
Peter W. Cook,
Richard B. Brown:
New optimal design strategies and analysis of ultra-low leakage circuits for nano-scale SOI technology.
ISLPED 2003: 168-171 |
12 | EE | Keunwoo Kim,
Rajiv V. Joshi,
Ching-Te Chuang:
Strained-si devices and circuits for low-power applications.
ISLPED 2003: 180-183 |
11 | EE | Ching-Te Chuang,
Rajiv V. Joshi,
Ruchir Puri,
Keunwoo Kim:
Design Considerations of Scaled Sub-0.1 ?m PD/SOI CMOS Circuits.
ISQED 2003: 153-158 |
10 | EE | Rajiv V. Joshi,
Ching-Te Chuang,
S. K. H. Fung,
Fari Assaderaghi,
Melanie Sherony,
I. Yang,
Ghavam V. Shahidi:
PD/SOI SRAM performance in presence of gate-to-body tunneling current.
IEEE Trans. VLSI Syst. 11(6): 1106-1113 (2003) |
9 | EE | R. Rodríguez,
James H. Stathis,
Barry P. Linder,
Rajiv V. Joshi,
Ching-Te Chuang:
Influence and model of gate oxide breakdown on CMOS inverters.
Microelectronics Reliability 43(9-11): 1439-1444 (2003) |
2002 |
8 | EE | R. Rodríguez,
James H. Stathis,
Barry P. Linder,
S. Kowalczyk,
Ching-Te Chuang,
Rajiv V. Joshi,
Gregory A. Northrop,
Kerry Bernstein,
A. J. Bhavnagarwala,
Salvatore Lombardo:
Analysis of the effect of the gate oxide breakdown on SRAM stability.
Microelectronics Reliability 42(9-11): 1445-1448 (2002) |
2001 |
7 | EE | Rajiv V. Joshi,
Wei Hwang,
Ching-Te Chuang:
SOI for asynchronous dynamic circuits.
ACM Great Lakes Symposium on VLSI 2001: 37-42 |
2000 |
6 | EE | Rajiv V. Joshi,
Wei Hwang,
S. C. Wilson,
Ching-Te Chuang:
"Cool low power" 1GHz multi-port register file and dynamic latch in 1.8 V, 0.25 mum SOI and bulk technology (poster session).
ISLPED 2000: 203-206 |
5 | EE | Rajiv V. Joshi,
Wei Hwang,
S. C. Wilson,
Ghavam V. Shahidi,
Ching-Te Chuang:
A Low Power 900 MHz Register File (8 Ports, 32 Words x 64 Bits) in 1.8V, 0.25µm SOI Technology.
VLSI Design 2000: 44-49 |
4 | EE | Ruchir Puri,
Ching-Te Chuang:
SOI Digital Circuits: Design Issues.
VLSI Design 2000: 474-479 |
1999 |
3 | EE | Ching-Te Chuang,
Ruchir Puri:
SOI Digital CMOS VLSI - a Design Perspective.
DAC 1999: 709-714 |
2 | EE | Ruchir Puri,
Ching-Te Chuang:
Hysteresis effect in floating-body partially-depleted SOI CMOS domino circuits.
ISLPED 1999: 223-228 |
1997 |
1 | EE | Leon J. Sigal,
James D. Warnock,
Brian W. Curran,
Yuen H. Chan,
Peter J. Camporese,
Mark D. Mayo,
William V. Huott,
Daniel R. Knebel,
Ching-Te Chuang,
James P. Eckhardt,
Philip T. Wu:
Circuit design techniques for the high-performance CMOS IBM S/390 Parallel Enterprise Server G4 microprocessor.
IBM Journal of Research and Development 41(4&5): 489-504 (1997) |