2008 | ||
---|---|---|
34 | EE | Aditya Bansal, Rama N. Singh, Saibal Mukhopadhyay, Geng Han, Fook-Luen Heng, Ching-Te Chuang: Pre-Si estimation and compensation of SRAM layout deficiencies to achieve target performance and yield. ICCD 2008: 457-462 |
33 | EE | Saibal Mukhopadhyay, Rahul M. Rao, Jae-Joon Kim, Ching-Te Chuang: Capacitive coupling based transient negative bit-line voltage (Tran-NBL) scheme for improving write-ability of SRAM design in nanometer technologies. ISCAS 2008: 384-387 |
32 | EE | Saibal Mukhopadhyay, Rajiv V. Joshi, Keunwoo Kim, Ching-Te Chuang: Variability Analysis for sub-100nm PD/SOI Sense-Amplifier. ISQED 2008: 488-491 |
31 | EE | Amlan Ghosh, Rahul M. Rao, Ching-Te Chuang, Richard B. Brown: On-Chip Process Variation Detection and Compensation Using Delay and Slew-Rate Monitoring Circuits. ISQED 2008: 815-820 |
30 | EE | Aditya Bansal, Jae-Joon Kim, Keunwoo Kim, Saibal Mukhopadhyay, Ching-Te Chuang, Kaushik Roy: Optimal Dual-VT Design in Sub-100 Nanometer PDSOI and Double-Gate Technologies. VLSI Design 2008: 125-130 |
29 | EE | Amlan Ghosh, Rahul M. Rao, Jae-Joon Kim, Ching-Te Chuang, Richard B. Brown: On-Chip Process Variation Detection Using Slew-Rate Monitoring Circuit. VLSI Design 2008: 143-149 |
28 | EE | Niladri Narayan Mojumder, Saibal Mukhopadhyay, Jae-Joon Kim, Ching-Te Chuang, Kaushik Roy: Design and Analysis of a Self-Repairing SRAM with On-Chip Monitor and Compensation Circuitry. VTS 2008: 101-106 |
27 | EE | Jente B. Kuang, Keunwoo Kim, Ching-Te Chuang, Hung C. Ngo, F. H. Gebara, Kevin J. Nowka: Circuit Techniques Utilizing Independent Gate Control in Double-Gate Technologies. IEEE Trans. VLSI Syst. 16(12): 1657-1665 (2008) |
2007 | ||
26 | EE | Saibal Mukhopadhyay, Keunwoo Kim, Ching-Te Chuang: Design and analysis of Thin-BOX FD/SOI devices for low-power and stable SRAM in sub-50nm technologies. ISLPED 2007: 20-25 |
25 | EE | Rajiv V. Joshi, Rouwaida Kanj, Keunwoo Kim, Richard Q. Williams, Ching-Te Chuang: A floating-body dynamic supply boosting technique for low-voltage sram in nanoscale PD/SOI CMOS technologies. ISLPED 2007: 8-13 |
24 | EE | Jie Deng, Keunwoo Kim, Ching-Te Chuang, H.-S. Philip Wong: Device Footprint Scaling for Ultra Thin Body Fully Depleted SOI. ISQED 2007: 145-152 |
23 | EE | Rajiv V. Joshi, Keunwoo Kim, Richard Q. Williams, Edward J. Nowak, Ching-Te Chuang: A High-Performance, Low Leakage, and Stable SRAM Row-Based Back-Gate Biasing Scheme in FinFET Technology. VLSI Design 2007: 665-672 |
22 | EE | Saibal Mukhopadhyay, Keunwoo Kim, Jae-Joon Kim, Shih-Hsien Lo, Rajiv V. Joshi, Ching-Te Chuang, Kaushik Roy: Estimation of gate-to-channel tunneling current in ultra-thin oxide sub-50nm double gate devices. Microelectronics Journal 38(8-9): 931-941 (2007) |
2006 | ||
21 | EE | Koushik K. Das, Shih-Hsien Lo, Ching-Te Chuang: High Performance MTCMOS Technique for Leakage Reduction in Hybrid SOI-Epitaxial Technologies with Enhanced-Mobility PFET Header. VLSI Design 2006: 758-761 |
20 | EE | Saibal Mukhopadhyay, Keunwoo Kim, Ching-Te Chuang, Kaushik Roy: Modeling and Analysis of Leakage Currents in Double-Gate Technologies. IEEE Trans. on CAD of Integrated Circuits and Systems 25(10): 2052-2061 (2006) |
2005 | ||
19 | EE | Saibal Mukhopadhyay, Keunwoo Kim, Ching-Te Chuang, Kaushik Roy: Modeling and analysis of total leakage currents in nanoscale double gate devices and circuits. ISLPED 2005: 8-13 |
18 | EE | Saibal Mukhopadhyay, Keunwoo Kim, Jae-Joon Kim, Shih-Hsien Lo, Rajiv V. Joshi, Ching-Te Chuang, Kaushik Roy: Modeling and Analysis of Gate Leakage in Ultra-thin Oxide Sub-50nm Double Gate Devices and Circuits. ISQED 2005: 410-415 |
17 | EE | Rajiv V. Joshi, S. S. Kang, N. Zamdmar, A. Mocuta, Ching-Te Chuang, J. A. Pascual-Gutiérrez: Direct Temperature Measurement for VLSI Circuits and 3-D Modeling of Self-Heating in Sub-0.13 mum SOI Technologies. VLSI Design 2005: 697-702 |
2004 | ||
16 | EE | Keunwoo Kim, Koushik K. Das, Rajiv V. Joshi, Ching-Te Chuang: Nanoscale CMOS circuit leakage power reduction by double-gate device. ISLPED 2004: 102-107 |
15 | EE | Rajiv V. Joshi, K. Kroell, Ching-Te Chuang: A Novel Technique For Steady State Analysis For VLSI Circuits In Partially Depleted SOI. VLSI Design 2004: 832- |
2003 | ||
14 | EE | Kerry Bernstein, Ching-Te Chuang, Rajiv V. Joshi, Ruchir Puri: Design and CAD Challenges in sub-90nm CMOS Technologies. ICCAD 2003: 129-137 |
13 | EE | Koushik K. Das, Rajiv V. Joshi, Ching-Te Chuang, Peter W. Cook, Richard B. Brown: New optimal design strategies and analysis of ultra-low leakage circuits for nano-scale SOI technology. ISLPED 2003: 168-171 |
12 | EE | Keunwoo Kim, Rajiv V. Joshi, Ching-Te Chuang: Strained-si devices and circuits for low-power applications. ISLPED 2003: 180-183 |
11 | EE | Ching-Te Chuang, Rajiv V. Joshi, Ruchir Puri, Keunwoo Kim: Design Considerations of Scaled Sub-0.1 ?m PD/SOI CMOS Circuits. ISQED 2003: 153-158 |
10 | EE | Rajiv V. Joshi, Ching-Te Chuang, S. K. H. Fung, Fari Assaderaghi, Melanie Sherony, I. Yang, Ghavam V. Shahidi: PD/SOI SRAM performance in presence of gate-to-body tunneling current. IEEE Trans. VLSI Syst. 11(6): 1106-1113 (2003) |
9 | EE | R. Rodríguez, James H. Stathis, Barry P. Linder, Rajiv V. Joshi, Ching-Te Chuang: Influence and model of gate oxide breakdown on CMOS inverters. Microelectronics Reliability 43(9-11): 1439-1444 (2003) |
2002 | ||
8 | EE | R. Rodríguez, James H. Stathis, Barry P. Linder, S. Kowalczyk, Ching-Te Chuang, Rajiv V. Joshi, Gregory A. Northrop, Kerry Bernstein, A. J. Bhavnagarwala, Salvatore Lombardo: Analysis of the effect of the gate oxide breakdown on SRAM stability. Microelectronics Reliability 42(9-11): 1445-1448 (2002) |
2001 | ||
7 | EE | Rajiv V. Joshi, Wei Hwang, Ching-Te Chuang: SOI for asynchronous dynamic circuits. ACM Great Lakes Symposium on VLSI 2001: 37-42 |
2000 | ||
6 | EE | Rajiv V. Joshi, Wei Hwang, S. C. Wilson, Ching-Te Chuang: "Cool low power" 1GHz multi-port register file and dynamic latch in 1.8 V, 0.25 mum SOI and bulk technology (poster session). ISLPED 2000: 203-206 |
5 | EE | Rajiv V. Joshi, Wei Hwang, S. C. Wilson, Ghavam V. Shahidi, Ching-Te Chuang: A Low Power 900 MHz Register File (8 Ports, 32 Words x 64 Bits) in 1.8V, 0.25µm SOI Technology. VLSI Design 2000: 44-49 |
4 | EE | Ruchir Puri, Ching-Te Chuang: SOI Digital Circuits: Design Issues. VLSI Design 2000: 474-479 |
1999 | ||
3 | EE | Ching-Te Chuang, Ruchir Puri: SOI Digital CMOS VLSI - a Design Perspective. DAC 1999: 709-714 |
2 | EE | Ruchir Puri, Ching-Te Chuang: Hysteresis effect in floating-body partially-depleted SOI CMOS domino circuits. ISLPED 1999: 223-228 |
1997 | ||
1 | EE | Leon J. Sigal, James D. Warnock, Brian W. Curran, Yuen H. Chan, Peter J. Camporese, Mark D. Mayo, William V. Huott, Daniel R. Knebel, Ching-Te Chuang, James P. Eckhardt, Philip T. Wu: Circuit design techniques for the high-performance CMOS IBM S/390 Parallel Enterprise Server G4 microprocessor. IBM Journal of Research and Development 41(4&5): 489-504 (1997) |