2008 |
15 | EE | Saibal Mukhopadhyay,
Rajiv V. Joshi,
Keunwoo Kim,
Ching-Te Chuang:
Variability Analysis for sub-100nm PD/SOI Sense-Amplifier.
ISQED 2008: 488-491 |
14 | EE | Rouwaida Kanj,
Rajiv V. Joshi,
Keunwoo Kim,
Richard Williams,
Sani R. Nassif:
Statistical Evaluation of Split Gate Opportunities for Improved 8T/6T Column-Decoupled SRAM Cell Yield.
ISQED 2008: 702-707 |
13 | EE | Aditya Bansal,
Jae-Joon Kim,
Keunwoo Kim,
Saibal Mukhopadhyay,
Ching-Te Chuang,
Kaushik Roy:
Optimal Dual-VT Design in Sub-100 Nanometer PDSOI and Double-Gate Technologies.
VLSI Design 2008: 125-130 |
12 | EE | Jente B. Kuang,
Keunwoo Kim,
Ching-Te Chuang,
Hung C. Ngo,
F. H. Gebara,
Kevin J. Nowka:
Circuit Techniques Utilizing Independent Gate Control in Double-Gate Technologies.
IEEE Trans. VLSI Syst. 16(12): 1657-1665 (2008) |
2007 |
11 | EE | Saibal Mukhopadhyay,
Keunwoo Kim,
Ching-Te Chuang:
Design and analysis of Thin-BOX FD/SOI devices for low-power and stable SRAM in sub-50nm technologies.
ISLPED 2007: 20-25 |
10 | EE | Rajiv V. Joshi,
Rouwaida Kanj,
Keunwoo Kim,
Richard Q. Williams,
Ching-Te Chuang:
A floating-body dynamic supply boosting technique for low-voltage sram in nanoscale PD/SOI CMOS technologies.
ISLPED 2007: 8-13 |
9 | EE | Jie Deng,
Keunwoo Kim,
Ching-Te Chuang,
H.-S. Philip Wong:
Device Footprint Scaling for Ultra Thin Body Fully Depleted SOI.
ISQED 2007: 145-152 |
8 | EE | Rajiv V. Joshi,
Keunwoo Kim,
Richard Q. Williams,
Edward J. Nowak,
Ching-Te Chuang:
A High-Performance, Low Leakage, and Stable SRAM Row-Based Back-Gate Biasing Scheme in FinFET Technology.
VLSI Design 2007: 665-672 |
7 | EE | Saibal Mukhopadhyay,
Keunwoo Kim,
Jae-Joon Kim,
Shih-Hsien Lo,
Rajiv V. Joshi,
Ching-Te Chuang,
Kaushik Roy:
Estimation of gate-to-channel tunneling current in ultra-thin oxide sub-50nm double gate devices.
Microelectronics Journal 38(8-9): 931-941 (2007) |
2006 |
6 | EE | Saibal Mukhopadhyay,
Keunwoo Kim,
Ching-Te Chuang,
Kaushik Roy:
Modeling and Analysis of Leakage Currents in Double-Gate Technologies.
IEEE Trans. on CAD of Integrated Circuits and Systems 25(10): 2052-2061 (2006) |
2005 |
5 | EE | Saibal Mukhopadhyay,
Keunwoo Kim,
Ching-Te Chuang,
Kaushik Roy:
Modeling and analysis of total leakage currents in nanoscale double gate devices and circuits.
ISLPED 2005: 8-13 |
4 | EE | Saibal Mukhopadhyay,
Keunwoo Kim,
Jae-Joon Kim,
Shih-Hsien Lo,
Rajiv V. Joshi,
Ching-Te Chuang,
Kaushik Roy:
Modeling and Analysis of Gate Leakage in Ultra-thin Oxide Sub-50nm Double Gate Devices and Circuits.
ISQED 2005: 410-415 |
2004 |
3 | EE | Keunwoo Kim,
Koushik K. Das,
Rajiv V. Joshi,
Ching-Te Chuang:
Nanoscale CMOS circuit leakage power reduction by double-gate device.
ISLPED 2004: 102-107 |
2003 |
2 | EE | Keunwoo Kim,
Rajiv V. Joshi,
Ching-Te Chuang:
Strained-si devices and circuits for low-power applications.
ISLPED 2003: 180-183 |
1 | EE | Ching-Te Chuang,
Rajiv V. Joshi,
Ruchir Puri,
Keunwoo Kim:
Design Considerations of Scaled Sub-0.1 ?m PD/SOI CMOS Circuits.
ISQED 2003: 153-158 |