2003 |
34 | EE | Charles F. Hawkins,
Ali Keshavarzi,
Jaume Segura:
A View from the Bottom: Nanometer Technology AC Parametric Failures -- Why, Where, and How to Detect.
DFT 2003: 267- |
33 | EE | Oleg Semenov,
Arman Vassighi,
Manoj Sachdev,
Ali Keshavarzi,
Charles F. Hawkins:
Burn-in Temperature Projections for Deep Sub-micron Technologies.
ITC 2003: 95-104 |
32 | EE | Ali Keshavarzi,
Kaushik Roy,
Charles F. Hawkins,
Vivek De:
Multiple-parameter CMOS IC testing with increased sensitivity for IDDQ.
IEEE Trans. VLSI Syst. 11(5): 863-870 (2003) |
2002 |
31 | EE | Jaume Segura,
Ali Keshavarzi,
Jerry M. Soden,
Charles F. Hawkins:
Parametric Failures in CMOS ICs - A Defect-Based Analysis.
ITC 2002: 90-99 |
30 | EE | B. Alorda,
M. Rosales,
Jerry M. Soden,
Charles F. Hawkins,
Jaume Segura:
Charge Based Transient Current Testing (CBT) for Submicron CMOS SRAMs.
ITC 2002: 947-953 |
29 | EE | Ali Keshavarzi,
James Tschanz,
Siva Narendra,
Vivek De,
W. Robert Daasch,
Kaushik Roy,
Manoj Sachdev,
Charles F. Hawkins:
Leakage and Process Variation Effects in Current Testing on Future CMOS Circuits.
IEEE Design & Test of Computers 19(5): 36-43 (2002) |
2001 |
28 | EE | Ivan de Paúl,
M. Rosales,
B. Alorda,
Jaume Segura,
Charles F. Hawkins,
Jerry M. Soden:
Defect Oriented Fault Diagnosis for Semiconductor Memories using Charge Analysis: Theory and Experiments.
VTS 2001: 286-291 |
2000 |
27 | | Ali Keshavarzi,
Kaushik Roy,
Charles F. Hawkins,
Manoj Sachdev,
K. Soumyanath,
Vivek De:
Multiple-parameter CMOS IC testing with increased sensitivity for I_DDQ.
ITC 2000: 1051-1059 |
26 | EE | Ali Keshavarzi,
Kaushik Roy,
Charles F. Hawkins:
Intrinsic leakage in deep submicron CMOS ICs-measurement-based test solutions.
IEEE Trans. VLSI Syst. 8(6): 717-723 (2000) |
1999 |
25 | EE | Ali Keshavarzi,
Siva Narendra,
Shekhar Borkar,
Charles F. Hawkins,
Kaushik Roy,
Vivek De:
Technology scaling behavior of optimum reverse body bias for standby leakage power reduction in CMOS IC's.
ISLPED 1999: 252-254 |
24 | EE | Charles F. Hawkins,
Jaume Segura:
Test and Reliability: Partners in IC Manufacturing, Part 1.
IEEE Design & Test of Computers 16(3): 64-71 (1999) |
23 | | Charles F. Hawkins,
Jerry M. Soden:
Deep Submicron CMOS Current IC Testing: Is There a Future?
IEEE Design & Test of Computers 16(4): 14-15 (1999) |
22 | EE | Charles F. Hawkins,
Jaume Segura,
Jerry M. Soden,
Ted Dellin:
Test and Reliability: Partners in IC Manufacturing, Part 2.
IEEE Design & Test of Computers 16(4): 66-73 (1999) |
1998 |
21 | EE | Alan W. Righter,
Charles F. Hawkins,
Jerry M. Soden,
Peter C. Maxwell:
CMOS IC reliability indicators and burn-in economics.
ITC 1998: 194-203 |
1997 |
20 | | Ali Keshavarzi,
Kaushik Roy,
Charles F. Hawkins:
Intrinsic Leakage in Low-Power Deep Submicron CMOS ICs.
ITC 1997: 146-155 |
19 | | Edward I. Cole Jr.,
Jerry M. Soden,
Paiboon Tangyunyong,
Patrick L. Candelaria,
Richard W. Beegle,
Daniel L. Barton,
Christopher L. Henderson,
Charles F. Hawkins:
Transient Power Supply Voltage (VDDT) Analysis for Detecting IC Defects.
ITC 1997: 23-31 |
1996 |
18 | EE | Jerry M. Soden,
Charles F. Hawkins:
IDDQ Testing: Issues Present and Future.
IEEE Design & Test of Computers 13(4): 61-65 (1996) |
17 | EE | Jaume Segura,
C. Benito,
A. Rubio,
Charles F. Hawkins:
A detailed analysis and electrical modeling of gate oxide shorts in MOS transistors.
J. Electronic Testing 8(3): 229-239 (1996) |
1995 |
16 | | Jaume Segura,
Carol de Benito,
A. Rubio,
Charles F. Hawkins:
A Detailed Analysis of GOS Defects in MOS Transistors: Testing Implications at Circuit Level.
ITC 1995: 544-551 |
15 | | Charles F. Hawkins,
Jerry M. Soden:
IDDQ Design and Test Advantages Propel Industry.
IEEE Design & Test of Computers 12(2): 40-41 (1995) |
1994 |
14 | | Charles F. Hawkins,
Jerry M. Soden,
Alan W. Righter,
F. Joel Ferguson:
Defect Classes - An Overdue Paradigm for CMOS IC.
ITC 1994: 413-425 |
1993 |
13 | | Richard H. Williams,
Charles F. Hawkins:
The Economics of Guardband Placement.
ITC 1993: 218-225 |
12 | | Jerry M. Soden,
Charles F. Hawkins:
Quality Testing Requires Quality Thinking.
ITC 1993: 596 |
11 | | Kenneth M. Wallquist,
Alan W. Righter,
Charles F. Hawkins:
A General Purpose IDDQ Measurement Circuit.
ITC 1993: 642-651 |
1992 |
10 | | Richard H. Williams,
R. Glenn Wagner,
Charles F. Hawkins:
Testing Errors: Data and Calculations in an IC Manufacturing Process.
ITC 1992: 352-361 |
9 | | Christopher L. Henderson,
Richard H. Williams,
Charles F. Hawkins:
Economic Impact of Type I Test Errors at System and Board Levels.
ITC 1992: 444-452 |
8 | | Charles F. Hawkins:
System Testing: The Future for All of Us.
ITC 1992: 548 |
7 | EE | Ravi K. Gulati,
Charles F. Hawkins:
Introduction.
J. Electronic Testing 3(4): 289 (1992) |
6 | EE | Jerry M. Soden,
Charles F. Hawkins,
Ravi K. Gulati,
Weiwei Mao:
IDDQ testing: A review.
J. Electronic Testing 3(4): 291-303 (1992) |
1991 |
5 | | Charles F. Hawkins,
Richard H. Williams:
EE Curriculum - Continuous Process Improvement?
ITC 1991: 1118 |
4 | | Christopher L. Henderson,
Jerry M. Soden,
Charles F. Hawkins:
The Behavior and Testing Implications of CMOS IC Logic Gate Open Circuits.
ITC 1991: 302-310 |
1989 |
3 | | Jerry M. Soden,
R. Keith Treece,
Michael R. Taylor,
Charles F. Hawkins:
CMOS IC Stuck-Open Fault Electrical Effects and Design Considerations.
ITC 1989: 423-430 |
1986 |
2 | | Jerry M. Soden,
Charles F. Hawkins:
Reliability and Electrical Properties of Gate Oxide Shorts in CMOS ICs.
ITC 1986: 443-451 |
1985 |
1 | | Jerry M. Soden,
Charles F. Hawkins:
Electrical Characteristics and Testing Considerations for Gate Oxide Shorts in CMOS ICs.
ITC 1985: 544-557 |