| |
| 2003 | ||
|---|---|---|
| 1 | EE | A. Curutchet, N. Malbert, N. Labat, A. Touboul, C. Gaquière, A. Minko, M. Uren: Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectronics Reliability 43(9-11): 1713-1718 (2003) |
| 1 | A. Curutchet | [1] |
| 2 | C. Gaquière | [1] |
| 3 | N. Labat | [1] |
| 4 | N. Malbert | [1] |
| 5 | A. Touboul | [1] |
| 6 | M. Uren | [1] |