2006 |
2 | EE | N. Sghaier,
M. Trabelsi,
N. Yacoubi,
J. M. Bluet,
A. Souifi,
G. Guillot,
C. Gaquière,
J. C. DeJaeger:
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates.
Microelectronics Journal 37(4): 363-370 (2006) |
2003 |
1 | EE | A. Curutchet,
N. Malbert,
N. Labat,
A. Touboul,
C. Gaquière,
A. Minko,
M. Uren:
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates.
Microelectronics Reliability 43(9-11): 1713-1718 (2003) |