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C. Gaquière

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2006
2EEN. Sghaier, M. Trabelsi, N. Yacoubi, J. M. Bluet, A. Souifi, G. Guillot, C. Gaquière, J. C. DeJaeger: Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. Microelectronics Journal 37(4): 363-370 (2006)
2003
1EEA. Curutchet, N. Malbert, N. Labat, A. Touboul, C. Gaquière, A. Minko, M. Uren: Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectronics Reliability 43(9-11): 1713-1718 (2003)

Coauthor Index

1J. M. Bluet [2]
2A. Curutchet [1]
3J. C. DeJaeger [2]
4G. Guillot [2]
5N. Labat [1]
6N. Malbert [1]
7A. Minko [1]
8N. Sghaier [2]
9A. Souifi [2]
10A. Touboul [1]
11M. Trabelsi [2]
12M. Uren [1]
13N. Yacoubi [2]

Colors in the list of coauthors

Copyright © Sun May 17 03:24:02 2009 by Michael Ley (ley@uni-trier.de)