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| 2003 | ||
|---|---|---|
| 1 | EE | M. Belhaj, C. Maneux, N. Labat, A. Touboul, P. Bove: High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects. Microelectronics Reliability 43(9-11): 1731-1736 (2003) |
| 1 | M. Belhaj | [1] |
| 2 | N. Labat | [1] |
| 3 | C. Maneux | [1] |
| 4 | A. Touboul | [1] |