2008 | ||
---|---|---|
65 | EE | Mahdi Pourfath, Hans Kosina, Siegfried Selberherr: Numerical study of quantum transport in carbon nanotube transistors. Mathematics and Computers in Simulation 79(4): 1051-1059 (2008) |
64 | EE | Enzo Ungersboeck, W. Gös, S. Dhar, Hans Kosina, Siegfried Selberherr: The effect of uniaxial stress on band structure and electron mobility of silicon. Mathematics and Computers in Simulation 79(4): 1071-1077 (2008) |
2007 | ||
63 | René Heinzl, Philipp Schwaha, Siegfried Selberherr: Modern Concepts for High-Perfomance Scientific Computing - Library Centric Application Design. ICSOFT (SE) 2007: 100-107 | |
62 | Philipp Schwaha, Markus Schwaha, René Heinzl, Enzo Ungersboeck, Siegfried Selberherr: Simulation Methodologies for Scientific Computing - Modern Application Design. ICSOFT (SE) 2007: 270-276 | |
61 | EE | Alexandre Nentchev, Siegfried Selberherr: Three-dimensional on-chip inductance and resistance extraction. SBCCI 2007: 218-223 |
60 | EE | Viktor Sverdlov, Hans Kosina, Siegfried Selberherr: Modeling current transport in ultra-scaled field-effect transistors. Microelectronics Reliability 47(1): 11-19 (2007) |
2006 | ||
59 | EE | Michael Spevak, René Heinzl, Philipp Schwaha, Siegfried Selberherr: A Computational Framework for Topological Operations. PARA 2006: 781-790 |
58 | EE | René Heinzl, Michael Spevak, Philipp Schwaha, Siegfried Selberherr: A High Performance Generic Scientific Simulation Environment. PARA 2006: 996-1005 |
57 | EE | J. Cervenka, W. Wessner, E. Al-Ani, Tibor Grasser, Siegfried Selberherr: Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations. IEEE Trans. on CAD of Integrated Circuits and Systems 25(10): 2118-2128 (2006) |
56 | EE | W. Wessner, J. Cervenka, Clemens Heitzinger, Andreas Hössinger, Siegfried Selberherr: Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes. IEEE Trans. on CAD of Integrated Circuits and Systems 25(10): 2129-2139 (2006) |
2005 | ||
55 | EE | Viktor Sverdlov, Hans Kosina, Christian A. Ringhofer, Mihail Nedjalkov, Siegfried Selberherr: Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator. LSSC 2005: 594-601 |
54 | EE | Stephan Wagner, Tibor Grasser, Claus Fischer, Siegfried Selberherr: An advanced equation assembly module. Eng. Comput. (Lond.) 21(2): 151-163 (2005) |
53 | EE | Clemens Heitzinger, Alireza Sheikholeslami, Jong Mun Park, Siegfried Selberherr: A method for generating structurally aligned grids for semiconductor device simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 24(10): 1485-1491 (2005) |
2004 | ||
52 | EE | Thomas Binder, Clemens Heitzinger, Siegfried Selberherr: A study on global and local optimization techniques for TCAD analysis tasks. IEEE Trans. on CAD of Integrated Circuits and Systems 23(6): 814-822 (2004) |
51 | EE | Clemens Heitzinger, Andreas Hössinger, Siegfried Selberherr: An algorithm for smoothing three-dimensional Monte Carlo ion implantation simulation results. Mathematics and Computers in Simulation 66(2-3): 219-230 (2004) |
50 | EE | Stefan Holzer, Rainer Minixhofer, Clemens Heitzinger, Johannes Fellner, Tibor Grasser, Siegfried Selberherr: Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures. Microelectronics Journal 35(10): 805-810 (2004) |
49 | EE | Clemens Heitzinger, Siegfried Selberherr: On the simulation of the formation and dissolution of silicon self-interstitial clusters and the corresponding inverse modeling problem. Microelectronics Journal 35(2): 167-171 (2004) |
48 | EE | J. M. Park, R. Klima, Siegfried Selberherr: High-voltage lateral trench gate SOI-LDMOSFETs. Microelectronics Journal 35(3): 299-304 (2004) |
47 | EE | Vassil Palankovski, Siegfried Selberherr: Rigorous modeling of high-speed semiconductor devices. Microelectronics Reliability 44(6): 889-897 (2004) |
46 | EE | Christian A. Ringhofer, Hans Kosina, Mihail Nedjalkov, Siegfried Selberherr: Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule. SIAM Journal of Applied Mathematics 64(6): 1933-1953 (2004) |
2003 | ||
45 | EE | Hans Kosina, Mihail Nedjalkov, Siegfried Selberherr: A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation. LSSC 2003: 170-177 |
44 | EE | Mihail Nedjalkov, Hans Kosina, Siegfried Selberherr: A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations. LSSC 2003: 178-184 |
43 | EE | Sergey Smirnov, Hans Kosina, Mihail Nedjalkov, Siegfried Selberherr: A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle. LSSC 2003: 185-193 |
42 | EE | Clemens Heitzinger, Wolfgang Pyka, Naoki Tamaoki, Toshiro Takase, Toshimitsu Ohmine, Siegfried Selberherr: Simulation of arsenic in situ doping with polysilicon CVD and its application to high aspect ratio trenches. IEEE Trans. on CAD of Integrated Circuits and Systems 22(3): 285-292 (2003) |
41 | EE | Clemens Heitzinger, Andreas Hössinger, Siegfried Selberherr: On smoothing three-dimensional Monte Carlo ion implantation simulation results. IEEE Trans. on CAD of Integrated Circuits and Systems 22(7): 879-883 (2003) |
40 | EE | Thomas Binder, Andreas Hössinger, Siegfried Selberherr: Rigorous integration of semiconductor process and device simulators. IEEE Trans. on CAD of Integrated Circuits and Systems 22(9): 1204-1214 (2003) |
39 | EE | Hans Kosina, Mihail Nedjalkov, Siegfried Selberherr: An event bias technique for Monte Carlo device simulation. Mathematics and Computers in Simulation 62(3-6): 367-375 (2003) |
38 | EE | Mihail Nedjalkov, Hans Kosina, Siegfried Selberherr: Monte Carlo algorithms for stationary device simulations. Mathematics and Computers in Simulation 62(3-6): 453-461 (2003) |
37 | EE | Mihail Nedjalkov, Hans Kosina, Siegfried Selberherr: Stochastic interpretation of the Wigner transport in nanostructures. Microelectronics Journal 34(5-8): 443-445 (2003) |
36 | EE | Christian Harlander, Rainer Sabelka, Siegfried Selberherr: Efficient inductance calculation in interconnect structures by applying the Monte Carlo method. Microelectronics Journal 34(9): 815-821 (2003) |
35 | EE | Andreas Gehring, F. Jiménez-Molinos, Hans Kosina, A. Palma, F. Gámiz, Siegfried Selberherr: Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices. Microelectronics Reliability 43(9-11): 1495-1500 (2003) |
34 | EE | T. Ayalew, Andreas Gehring, J. M. Park, Tibor Grasser, Siegfried Selberherr: Improving SiC lateral DMOSFET reliability under high field stress. Microelectronics Reliability 43(9-11): 1889-1894 (2003) |
2002 | ||
33 | Clemens Heitzinger, Siegfried Selberherr: On the Topography Simulation of Memory Cell Trenches for Semiconductor Manufacturing Deposition Processes using the Level Set Method. ESM 2002: 653-660 | |
32 | EE | Hajdin Ceric, Siegfried Selberherr: Simulative prediction of the resistance change due to electromigration induced void evolution. Microelectronics Reliability 42(9-11): 1457-1460 (2002) |
2001 | ||
31 | EE | Hans Kosina, Mihail Nedjalkov, Siegfried Selberherr: Monte Carlo Analysis of the Small-Signal Response of Charge Carriers. LSSC 2001: 175-182 |
2000 | ||
30 | Thomas Binder, Siegfried Selberherr: Object-oriented wafer-state services. ESM 2000: 360-364 | |
29 | EE | Robert Kosik, Peter Fleischmann, Bernhard Haindl, Paola Pietra, Siegfried Selberherr: On the interplay between meshing and discretization inthree-dimensional diffusion simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 19(11): 1233-1240 (2000) |
28 | EE | Andreas Hössinger, Erasmus Langer, Siegfried Selberherr: Parallelization of a Monte Carlo ion implantation simulator. IEEE Trans. on CAD of Integrated Circuits and Systems 19(5): 560-567 (2000) |
1999 | ||
27 | M. Radi, Siegfried Selberherr: AMIGOS A Rapid Prototyping System. Applied Informatics 1999: 372-374 | |
26 | EE | Peter Fleischmann, Robert Kosik, Siegfried Selberherr: Simple Mesh Examples to Illustrate Specific Finite Element Mesh Requirements. IMR 1999: 241-246 |
25 | EE | Wolfgang Pyka, Peter Fleischmann, Bernhard Haindl, Siegfried Selberherr: Three-dimensional simulation of HPCVD-linking continuum transport and reaction kinetics with topography simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 18(12): 1741-1749 (1999) |
1998 | ||
24 | EE | Rui Martins, Wolfgang Pyka, Rainer Sabelka, Siegfried Selberherr: High-precision interconnect analysis. IEEE Trans. on CAD of Integrated Circuits and Systems 17(11): 1148-1159 (1998) |
23 | EE | Walter Bohmayr, Alexander Burenkov, Jürgen Lorenz, Heiner Ryssel, Siegfried Selberherr: Monte Carlo simulation of silicon amorphization during ion implantation. IEEE Trans. on CAD of Integrated Circuits and Systems 17(12): 1236-1243 (1998) |
22 | EE | Richard Plasun, Michael Stockinger, Siegfried Selberherr: Integrated optimization capabilities in the VISTA technology CAD framework. IEEE Trans. on CAD of Integrated Circuits and Systems 17(12): 1244-1251 (1998) |
21 | EE | Ernst Leitner, Siegfried Selberherr: Mixed-element decomposition method for three-dimensional grid adaptation. IEEE Trans. on CAD of Integrated Circuits and Systems 17(7): 561-572 (1998) |
1997 | ||
20 | EE | Heinrich Kirchauer, Siegfried Selberherr: Rigorous three-dimensional photoresist exposure and development simulation over nonplanar topography. IEEE Trans. on CAD of Integrated Circuits and Systems 16(12): 1431-1438 (1997) |
19 | EE | Christoph Wasshuber, Hans Kosina, Siegfried Selberherr: SIMON-A simulator for single-electron tunnel devices and circuits. IEEE Trans. on CAD of Integrated Circuits and Systems 16(9): 937-944 (1997) |
1995 | ||
18 | EE | Stefan Halama, Christoph Pichler, Gerhard Rieger, Gerhard Schrom, Thomas Simlinger, Siegfried Selberherr: VISTA-user interface, task level, and tool integration. IEEE Trans. on CAD of Integrated Circuits and Systems 14(10): 1208-1222 (1995) |
17 | EE | Ernst Strasser, Siegfried Selberherr: Algorithms and models for cellular based topography simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 14(9): 1104-1114 (1995) |
1994 | ||
16 | EE | Franz Fasching, Walter Tuppa, Siegfried Selberherr: VISTA-the data level. IEEE Trans. on CAD of Integrated Circuits and Systems 13(1): 72-81 (1994) |
15 | EE | Hans Kosina, Siegfried Selberherr: A hybrid device simulator that combines Monte Carlo and drift-diffusion analysis. IEEE Trans. on CAD of Integrated Circuits and Systems 13(2): 201-210 (1994) |
1992 | ||
14 | EE | Gerd Nanz, Peter Dickinger, Siegfried Selberherr: Calculation of contact currents in device simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 11(1): 128-136 (1992) |
1991 | ||
13 | EE | Karl P. Traar, Martin Stiftinger, Otto Heinreichsberger, Siegfried Selberherr: Three-dimensional simulation of semiconductor devices on supercomputers. ICS 1991: 154-162 |
12 | Otto Heinreichsberger, Siegfried Selberherr, Martin Stiftinger: Three-Dimensional MOS Device Simulation on a Connection Machine. PPSC 1991: 388-393 | |
1990 | ||
11 | EE | Karl P. Traar, Wolfgang R. Mader, Otto Heinreichsberger, Siegfried Selberherr, Martin Stiftinger: High performance preconditioning on supercomputers for the 3D device simulator MINIMOS. SC 1990: 224-231 |
10 | EE | Martin Thurner, Philipp Lindorfer, Siegfried Selberherr: Numerical treatment of nonrectangular field-oxide for 3-D MOSFET simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 9(11): 1189-1197 (1990) |
9 | EE | Martin Thurner, Siegfried Selberherr: Three-dimensional effects due to the field oxide in MOS devices analyzed with MINIMOS 5. IEEE Trans. on CAD of Integrated Circuits and Systems 9(8): 856-867 (1990) |
1989 | ||
8 | EE | Gerhard Hobler, Siegfried Selberherr: Monte Carlo simulation of ion implantation into two- and three-dimensional structures. IEEE Trans. on CAD of Integrated Circuits and Systems 8(5): 450-459 (1989) |
1988 | ||
7 | EE | Gerhard Hobler, Siegfried Selberherr: Two-dimensional modeling of ion implantation induced point defects. IEEE Trans. on CAD of Integrated Circuits and Systems 7(2): 174-180 (1988) |
1985 | ||
6 | EE | Peter Pichler, Werner Jüngling, Siegfried Selberherr, Edgar Guerrero, Hans W. Pötzl: Simulation of Critical IC-Fabrication Steps. IEEE Trans. on CAD of Integrated Circuits and Systems 4(4): 384-397 (1985) |
1984 | ||
5 | Johannes Demel, Siegfried Selberherr: JANAP - ein Programm zur Simulation des Zeitverhaltens von nichtlinearen elektrischen Schaltungen. Simulationstechnik 1984: 149-153 | |
4 | Siegfried Selberherr, Hans W. Pötzl: Numerische Simulation von Halbleiterbauelementen. Simulationstechnik 1984: 154-158 | |
3 | Johannes Demel, Siegfried Selberherr: VDPACK - Ein benutzerorientiertes Unterprogrammpaket zur Realisierung einer dynamischen Speicherverwaltung in FORTRAN. Angewandte Informatik 26(6): 244-247 (1984) | |
2 | EE | Siegfried Selberherr, Christian A. Ringhofer: Implications of Analytical Investigations About the Semiconductor Equations on Device Modeling Programs. IEEE Trans. on CAD of Integrated Circuits and Systems 3(1): 52-64 (1984) |
1982 | ||
1 | EE | A. Schütz, Siegfried Selberherr, Hans W. Pötzl: Analysis of Breakdown Phenomena in MOSFET's. IEEE Trans. on CAD of Integrated Circuits and Systems 1(2): 77-85 (1982) |