| 2008 |
|---|
| 65 | EE | Mahdi Pourfath,
Hans Kosina,
Siegfried Selberherr:
Numerical study of quantum transport in carbon nanotube transistors.
Mathematics and Computers in Simulation 79(4): 1051-1059 (2008) |
| 64 | EE | Enzo Ungersboeck,
W. Gös,
S. Dhar,
Hans Kosina,
Siegfried Selberherr:
The effect of uniaxial stress on band structure and electron mobility of silicon.
Mathematics and Computers in Simulation 79(4): 1071-1077 (2008) |
| 2007 |
|---|
| 63 | | René Heinzl,
Philipp Schwaha,
Siegfried Selberherr:
Modern Concepts for High-Perfomance Scientific Computing - Library Centric Application Design.
ICSOFT (SE) 2007: 100-107 |
| 62 | | Philipp Schwaha,
Markus Schwaha,
René Heinzl,
Enzo Ungersboeck,
Siegfried Selberherr:
Simulation Methodologies for Scientific Computing - Modern Application Design.
ICSOFT (SE) 2007: 270-276 |
| 61 | EE | Alexandre Nentchev,
Siegfried Selberherr:
Three-dimensional on-chip inductance and resistance extraction.
SBCCI 2007: 218-223 |
| 60 | EE | Viktor Sverdlov,
Hans Kosina,
Siegfried Selberherr:
Modeling current transport in ultra-scaled field-effect transistors.
Microelectronics Reliability 47(1): 11-19 (2007) |
| 2006 |
|---|
| 59 | EE | Michael Spevak,
René Heinzl,
Philipp Schwaha,
Siegfried Selberherr:
A Computational Framework for Topological Operations.
PARA 2006: 781-790 |
| 58 | EE | René Heinzl,
Michael Spevak,
Philipp Schwaha,
Siegfried Selberherr:
A High Performance Generic Scientific Simulation Environment.
PARA 2006: 996-1005 |
| 57 | EE | J. Cervenka,
W. Wessner,
E. Al-Ani,
Tibor Grasser,
Siegfried Selberherr:
Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations.
IEEE Trans. on CAD of Integrated Circuits and Systems 25(10): 2118-2128 (2006) |
| 56 | EE | W. Wessner,
J. Cervenka,
Clemens Heitzinger,
Andreas Hössinger,
Siegfried Selberherr:
Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes.
IEEE Trans. on CAD of Integrated Circuits and Systems 25(10): 2129-2139 (2006) |
| 2005 |
|---|
| 55 | EE | Viktor Sverdlov,
Hans Kosina,
Christian A. Ringhofer,
Mihail Nedjalkov,
Siegfried Selberherr:
Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator.
LSSC 2005: 594-601 |
| 54 | EE | Stephan Wagner,
Tibor Grasser,
Claus Fischer,
Siegfried Selberherr:
An advanced equation assembly module.
Eng. Comput. (Lond.) 21(2): 151-163 (2005) |
| 53 | EE | Clemens Heitzinger,
Alireza Sheikholeslami,
Jong Mun Park,
Siegfried Selberherr:
A method for generating structurally aligned grids for semiconductor device simulation.
IEEE Trans. on CAD of Integrated Circuits and Systems 24(10): 1485-1491 (2005) |
| 2004 |
|---|
| 52 | EE | Thomas Binder,
Clemens Heitzinger,
Siegfried Selberherr:
A study on global and local optimization techniques for TCAD analysis tasks.
IEEE Trans. on CAD of Integrated Circuits and Systems 23(6): 814-822 (2004) |
| 51 | EE | Clemens Heitzinger,
Andreas Hössinger,
Siegfried Selberherr:
An algorithm for smoothing three-dimensional Monte Carlo ion implantation simulation results.
Mathematics and Computers in Simulation 66(2-3): 219-230 (2004) |
| 50 | EE | Stefan Holzer,
Rainer Minixhofer,
Clemens Heitzinger,
Johannes Fellner,
Tibor Grasser,
Siegfried Selberherr:
Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures.
Microelectronics Journal 35(10): 805-810 (2004) |
| 49 | EE | Clemens Heitzinger,
Siegfried Selberherr:
On the simulation of the formation and dissolution of silicon self-interstitial clusters and the corresponding inverse modeling problem.
Microelectronics Journal 35(2): 167-171 (2004) |
| 48 | EE | J. M. Park,
R. Klima,
Siegfried Selberherr:
High-voltage lateral trench gate SOI-LDMOSFETs.
Microelectronics Journal 35(3): 299-304 (2004) |
| 47 | EE | Vassil Palankovski,
Siegfried Selberherr:
Rigorous modeling of high-speed semiconductor devices.
Microelectronics Reliability 44(6): 889-897 (2004) |
| 46 | EE | Christian A. Ringhofer,
Hans Kosina,
Mihail Nedjalkov,
Siegfried Selberherr:
Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule.
SIAM Journal of Applied Mathematics 64(6): 1933-1953 (2004) |
| 2003 |
|---|
| 45 | EE | Hans Kosina,
Mihail Nedjalkov,
Siegfried Selberherr:
A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation.
LSSC 2003: 170-177 |
| 44 | EE | Mihail Nedjalkov,
Hans Kosina,
Siegfried Selberherr:
A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations.
LSSC 2003: 178-184 |
| 43 | EE | Sergey Smirnov,
Hans Kosina,
Mihail Nedjalkov,
Siegfried Selberherr:
A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle.
LSSC 2003: 185-193 |
| 42 | EE | Clemens Heitzinger,
Wolfgang Pyka,
Naoki Tamaoki,
Toshiro Takase,
Toshimitsu Ohmine,
Siegfried Selberherr:
Simulation of arsenic in situ doping with polysilicon CVD and its application to high aspect ratio trenches.
IEEE Trans. on CAD of Integrated Circuits and Systems 22(3): 285-292 (2003) |
| 41 | EE | Clemens Heitzinger,
Andreas Hössinger,
Siegfried Selberherr:
On smoothing three-dimensional Monte Carlo ion implantation simulation results.
IEEE Trans. on CAD of Integrated Circuits and Systems 22(7): 879-883 (2003) |
| 40 | EE | Thomas Binder,
Andreas Hössinger,
Siegfried Selberherr:
Rigorous integration of semiconductor process and device simulators.
IEEE Trans. on CAD of Integrated Circuits and Systems 22(9): 1204-1214 (2003) |
| 39 | EE | Hans Kosina,
Mihail Nedjalkov,
Siegfried Selberherr:
An event bias technique for Monte Carlo device simulation.
Mathematics and Computers in Simulation 62(3-6): 367-375 (2003) |
| 38 | EE | Mihail Nedjalkov,
Hans Kosina,
Siegfried Selberherr:
Monte Carlo algorithms for stationary device simulations.
Mathematics and Computers in Simulation 62(3-6): 453-461 (2003) |
| 37 | EE | Mihail Nedjalkov,
Hans Kosina,
Siegfried Selberherr:
Stochastic interpretation of the Wigner transport in nanostructures.
Microelectronics Journal 34(5-8): 443-445 (2003) |
| 36 | EE | Christian Harlander,
Rainer Sabelka,
Siegfried Selberherr:
Efficient inductance calculation in interconnect structures by applying the Monte Carlo method.
Microelectronics Journal 34(9): 815-821 (2003) |
| 35 | EE | Andreas Gehring,
F. Jiménez-Molinos,
Hans Kosina,
A. Palma,
F. Gámiz,
Siegfried Selberherr:
Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices.
Microelectronics Reliability 43(9-11): 1495-1500 (2003) |
| 34 | EE | T. Ayalew,
Andreas Gehring,
J. M. Park,
Tibor Grasser,
Siegfried Selberherr:
Improving SiC lateral DMOSFET reliability under high field stress.
Microelectronics Reliability 43(9-11): 1889-1894 (2003) |
| 2002 |
|---|
| 33 | | Clemens Heitzinger,
Siegfried Selberherr:
On the Topography Simulation of Memory Cell Trenches for Semiconductor Manufacturing Deposition Processes using the Level Set Method.
ESM 2002: 653-660 |
| 32 | EE | Hajdin Ceric,
Siegfried Selberherr:
Simulative prediction of the resistance change due to electromigration induced void evolution.
Microelectronics Reliability 42(9-11): 1457-1460 (2002) |
| 2001 |
|---|
| 31 | EE | Hans Kosina,
Mihail Nedjalkov,
Siegfried Selberherr:
Monte Carlo Analysis of the Small-Signal Response of Charge Carriers.
LSSC 2001: 175-182 |
| 2000 |
|---|
| 30 | | Thomas Binder,
Siegfried Selberherr:
Object-oriented wafer-state services.
ESM 2000: 360-364 |
| 29 | EE | Robert Kosik,
Peter Fleischmann,
Bernhard Haindl,
Paola Pietra,
Siegfried Selberherr:
On the interplay between meshing and discretization inthree-dimensional diffusion simulation.
IEEE Trans. on CAD of Integrated Circuits and Systems 19(11): 1233-1240 (2000) |
| 28 | EE | Andreas Hössinger,
Erasmus Langer,
Siegfried Selberherr:
Parallelization of a Monte Carlo ion implantation simulator.
IEEE Trans. on CAD of Integrated Circuits and Systems 19(5): 560-567 (2000) |
| 1999 |
|---|
| 27 | | M. Radi,
Siegfried Selberherr:
AMIGOS A Rapid Prototyping System.
Applied Informatics 1999: 372-374 |
| 26 | EE | Peter Fleischmann,
Robert Kosik,
Siegfried Selberherr:
Simple Mesh Examples to Illustrate Specific Finite Element Mesh Requirements.
IMR 1999: 241-246 |
| 25 | EE | Wolfgang Pyka,
Peter Fleischmann,
Bernhard Haindl,
Siegfried Selberherr:
Three-dimensional simulation of HPCVD-linking continuum transport and reaction kinetics with topography simulation.
IEEE Trans. on CAD of Integrated Circuits and Systems 18(12): 1741-1749 (1999) |
| 1998 |
|---|
| 24 | EE | Rui Martins,
Wolfgang Pyka,
Rainer Sabelka,
Siegfried Selberherr:
High-precision interconnect analysis.
IEEE Trans. on CAD of Integrated Circuits and Systems 17(11): 1148-1159 (1998) |
| 23 | EE | Walter Bohmayr,
Alexander Burenkov,
Jürgen Lorenz,
Heiner Ryssel,
Siegfried Selberherr:
Monte Carlo simulation of silicon amorphization during ion implantation.
IEEE Trans. on CAD of Integrated Circuits and Systems 17(12): 1236-1243 (1998) |
| 22 | EE | Richard Plasun,
Michael Stockinger,
Siegfried Selberherr:
Integrated optimization capabilities in the VISTA technology CAD framework.
IEEE Trans. on CAD of Integrated Circuits and Systems 17(12): 1244-1251 (1998) |
| 21 | EE | Ernst Leitner,
Siegfried Selberherr:
Mixed-element decomposition method for three-dimensional grid adaptation.
IEEE Trans. on CAD of Integrated Circuits and Systems 17(7): 561-572 (1998) |
| 1997 |
|---|
| 20 | EE | Heinrich Kirchauer,
Siegfried Selberherr:
Rigorous three-dimensional photoresist exposure and development simulation over nonplanar topography.
IEEE Trans. on CAD of Integrated Circuits and Systems 16(12): 1431-1438 (1997) |
| 19 | EE | Christoph Wasshuber,
Hans Kosina,
Siegfried Selberherr:
SIMON-A simulator for single-electron tunnel devices and circuits.
IEEE Trans. on CAD of Integrated Circuits and Systems 16(9): 937-944 (1997) |
| 1995 |
|---|
| 18 | EE | Stefan Halama,
Christoph Pichler,
Gerhard Rieger,
Gerhard Schrom,
Thomas Simlinger,
Siegfried Selberherr:
VISTA-user interface, task level, and tool integration.
IEEE Trans. on CAD of Integrated Circuits and Systems 14(10): 1208-1222 (1995) |
| 17 | EE | Ernst Strasser,
Siegfried Selberherr:
Algorithms and models for cellular based topography simulation.
IEEE Trans. on CAD of Integrated Circuits and Systems 14(9): 1104-1114 (1995) |
| 1994 |
|---|
| 16 | EE | Franz Fasching,
Walter Tuppa,
Siegfried Selberherr:
VISTA-the data level.
IEEE Trans. on CAD of Integrated Circuits and Systems 13(1): 72-81 (1994) |
| 15 | EE | Hans Kosina,
Siegfried Selberherr:
A hybrid device simulator that combines Monte Carlo and drift-diffusion analysis.
IEEE Trans. on CAD of Integrated Circuits and Systems 13(2): 201-210 (1994) |
| 1992 |
|---|
| 14 | EE | Gerd Nanz,
Peter Dickinger,
Siegfried Selberherr:
Calculation of contact currents in device simulation.
IEEE Trans. on CAD of Integrated Circuits and Systems 11(1): 128-136 (1992) |
| 1991 |
|---|
| 13 | EE | Karl P. Traar,
Martin Stiftinger,
Otto Heinreichsberger,
Siegfried Selberherr:
Three-dimensional simulation of semiconductor devices on supercomputers.
ICS 1991: 154-162 |
| 12 | | Otto Heinreichsberger,
Siegfried Selberherr,
Martin Stiftinger:
Three-Dimensional MOS Device Simulation on a Connection Machine.
PPSC 1991: 388-393 |
| 1990 |
|---|
| 11 | EE | Karl P. Traar,
Wolfgang R. Mader,
Otto Heinreichsberger,
Siegfried Selberherr,
Martin Stiftinger:
High performance preconditioning on supercomputers for the 3D device simulator MINIMOS.
SC 1990: 224-231 |
| 10 | EE | Martin Thurner,
Philipp Lindorfer,
Siegfried Selberherr:
Numerical treatment of nonrectangular field-oxide for 3-D MOSFET simulation.
IEEE Trans. on CAD of Integrated Circuits and Systems 9(11): 1189-1197 (1990) |
| 9 | EE | Martin Thurner,
Siegfried Selberherr:
Three-dimensional effects due to the field oxide in MOS devices analyzed with MINIMOS 5.
IEEE Trans. on CAD of Integrated Circuits and Systems 9(8): 856-867 (1990) |
| 1989 |
|---|
| 8 | EE | Gerhard Hobler,
Siegfried Selberherr:
Monte Carlo simulation of ion implantation into two- and three-dimensional structures.
IEEE Trans. on CAD of Integrated Circuits and Systems 8(5): 450-459 (1989) |
| 1988 |
|---|
| 7 | EE | Gerhard Hobler,
Siegfried Selberherr:
Two-dimensional modeling of ion implantation induced point defects.
IEEE Trans. on CAD of Integrated Circuits and Systems 7(2): 174-180 (1988) |
| 1985 |
|---|
| 6 | EE | Peter Pichler,
Werner Jüngling,
Siegfried Selberherr,
Edgar Guerrero,
Hans W. Pötzl:
Simulation of Critical IC-Fabrication Steps.
IEEE Trans. on CAD of Integrated Circuits and Systems 4(4): 384-397 (1985) |
| 1984 |
|---|
| 5 | | Johannes Demel,
Siegfried Selberherr:
JANAP - ein Programm zur Simulation des Zeitverhaltens von nichtlinearen elektrischen Schaltungen.
Simulationstechnik 1984: 149-153 |
| 4 | | Siegfried Selberherr,
Hans W. Pötzl:
Numerische Simulation von Halbleiterbauelementen.
Simulationstechnik 1984: 154-158 |
| 3 | | Johannes Demel,
Siegfried Selberherr:
VDPACK - Ein benutzerorientiertes Unterprogrammpaket zur Realisierung einer dynamischen Speicherverwaltung in FORTRAN.
Angewandte Informatik 26(6): 244-247 (1984) |
| 2 | EE | Siegfried Selberherr,
Christian A. Ringhofer:
Implications of Analytical Investigations About the Semiconductor Equations on Device Modeling Programs.
IEEE Trans. on CAD of Integrated Circuits and Systems 3(1): 52-64 (1984) |
| 1982 |
|---|
| 1 | EE | A. Schütz,
Siegfried Selberherr,
Hans W. Pötzl:
Analysis of Breakdown Phenomena in MOSFET's.
IEEE Trans. on CAD of Integrated Circuits and Systems 1(2): 77-85 (1982) |
