2008 |
21 | EE | Yiming Li,
Juncheng Cao,
Pavel Dyshlovenko,
Tatsuya Ezaki,
Tor A. Fjeldly,
Hans Kosina,
Todd McKenzie,
Hiroshi Mizuta,
Laurence Tianruo Yang:
Preface.
Mathematics and Computers in Simulation 79(4): 1049-1050 (2008) |
20 | EE | Mahdi Pourfath,
Hans Kosina,
Siegfried Selberherr:
Numerical study of quantum transport in carbon nanotube transistors.
Mathematics and Computers in Simulation 79(4): 1051-1059 (2008) |
19 | EE | Enzo Ungersboeck,
W. Gös,
S. Dhar,
Hans Kosina,
Siegfried Selberherr:
The effect of uniaxial stress on band structure and electron mobility of silicon.
Mathematics and Computers in Simulation 79(4): 1071-1077 (2008) |
2007 |
18 | EE | Ling Li,
Gregor Meller,
Hans Kosina:
Temperature and field-dependence of hopping conduction in organic semiconductors.
Microelectronics Journal 38(1): 47-51 (2007) |
17 | EE | Viktor Sverdlov,
Hans Kosina,
Siegfried Selberherr:
Modeling current transport in ultra-scaled field-effect transistors.
Microelectronics Reliability 47(1): 11-19 (2007) |
2005 |
16 | EE | Mihail Nedjalkov,
Todor V. Gurov,
Hans Kosina,
Dragica Vasileska,
V. Palankovski:
Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations Part I: Kinetic Approach.
LSSC 2005: 149-156 |
15 | EE | Markus Karner,
Andreas Gehring,
Stefan Holzer,
Hans Kosina:
Efficient Calculation of Quasi-bound States for the Simulation of Direct Tunneling.
LSSC 2005: 572-577 |
14 | EE | Mahdi Pourfath,
Hans Kosina:
Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors.
LSSC 2005: 578-585 |
13 | EE | Viktor Sverdlov,
Hans Kosina,
Christian A. Ringhofer,
Mihail Nedjalkov,
Siegfried Selberherr:
Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator.
LSSC 2005: 594-601 |
2004 |
12 | EE | Christian A. Ringhofer,
Hans Kosina,
Mihail Nedjalkov,
Siegfried Selberherr:
Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule.
SIAM Journal of Applied Mathematics 64(6): 1933-1953 (2004) |
2003 |
11 | EE | Hans Kosina,
Mihail Nedjalkov,
Siegfried Selberherr:
A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation.
LSSC 2003: 170-177 |
10 | EE | Mihail Nedjalkov,
Hans Kosina,
Siegfried Selberherr:
A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations.
LSSC 2003: 178-184 |
9 | EE | Sergey Smirnov,
Hans Kosina,
Mihail Nedjalkov,
Siegfried Selberherr:
A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle.
LSSC 2003: 185-193 |
8 | EE | Hans Kosina,
Mihail Nedjalkov,
Siegfried Selberherr:
An event bias technique for Monte Carlo device simulation.
Mathematics and Computers in Simulation 62(3-6): 367-375 (2003) |
7 | EE | Mihail Nedjalkov,
Hans Kosina,
Siegfried Selberherr:
Monte Carlo algorithms for stationary device simulations.
Mathematics and Computers in Simulation 62(3-6): 453-461 (2003) |
6 | EE | Mihail Nedjalkov,
Hans Kosina,
Siegfried Selberherr:
Stochastic interpretation of the Wigner transport in nanostructures.
Microelectronics Journal 34(5-8): 443-445 (2003) |
5 | EE | Andreas Gehring,
F. Jiménez-Molinos,
Hans Kosina,
A. Palma,
F. Gámiz,
Siegfried Selberherr:
Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices.
Microelectronics Reliability 43(9-11): 1495-1500 (2003) |
2001 |
4 | EE | Hans Kosina,
Mihail Nedjalkov,
Siegfried Selberherr:
Monte Carlo Analysis of the Small-Signal Response of Charge Carriers.
LSSC 2001: 175-182 |
3 | EE | Mihail Nedjalkov,
Todor V. Gurov,
Hans Kosina,
Paula A. Whitlock:
Statistical Algorithms for Simulation of Electron Quantum Kinetics in Semiconductors - Part II.
LSSC 2001: 183-192 |
1997 |
2 | EE | Christoph Wasshuber,
Hans Kosina,
Siegfried Selberherr:
SIMON-A simulator for single-electron tunnel devices and circuits.
IEEE Trans. on CAD of Integrated Circuits and Systems 16(9): 937-944 (1997) |
1994 |
1 | EE | Hans Kosina,
Siegfried Selberherr:
A hybrid device simulator that combines Monte Carlo and drift-diffusion analysis.
IEEE Trans. on CAD of Integrated Circuits and Systems 13(2): 201-210 (1994) |