| 2006 |
|---|
| 9 | EE | W. Wessner,
J. Cervenka,
Clemens Heitzinger,
Andreas Hössinger,
Siegfried Selberherr:
Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes.
IEEE Trans. on CAD of Integrated Circuits and Systems 25(10): 2129-2139 (2006) |
| 2005 |
|---|
| 8 | EE | Clemens Heitzinger,
Alireza Sheikholeslami,
Jong Mun Park,
Siegfried Selberherr:
A method for generating structurally aligned grids for semiconductor device simulation.
IEEE Trans. on CAD of Integrated Circuits and Systems 24(10): 1485-1491 (2005) |
| 2004 |
|---|
| 7 | EE | Thomas Binder,
Clemens Heitzinger,
Siegfried Selberherr:
A study on global and local optimization techniques for TCAD analysis tasks.
IEEE Trans. on CAD of Integrated Circuits and Systems 23(6): 814-822 (2004) |
| 6 | EE | Clemens Heitzinger,
Andreas Hössinger,
Siegfried Selberherr:
An algorithm for smoothing three-dimensional Monte Carlo ion implantation simulation results.
Mathematics and Computers in Simulation 66(2-3): 219-230 (2004) |
| 5 | EE | Stefan Holzer,
Rainer Minixhofer,
Clemens Heitzinger,
Johannes Fellner,
Tibor Grasser,
Siegfried Selberherr:
Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures.
Microelectronics Journal 35(10): 805-810 (2004) |
| 4 | EE | Clemens Heitzinger,
Siegfried Selberherr:
On the simulation of the formation and dissolution of silicon self-interstitial clusters and the corresponding inverse modeling problem.
Microelectronics Journal 35(2): 167-171 (2004) |
| 2003 |
|---|
| 3 | EE | Clemens Heitzinger,
Wolfgang Pyka,
Naoki Tamaoki,
Toshiro Takase,
Toshimitsu Ohmine,
Siegfried Selberherr:
Simulation of arsenic in situ doping with polysilicon CVD and its application to high aspect ratio trenches.
IEEE Trans. on CAD of Integrated Circuits and Systems 22(3): 285-292 (2003) |
| 2 | EE | Clemens Heitzinger,
Andreas Hössinger,
Siegfried Selberherr:
On smoothing three-dimensional Monte Carlo ion implantation simulation results.
IEEE Trans. on CAD of Integrated Circuits and Systems 22(7): 879-883 (2003) |
| 2002 |
|---|
| 1 | | Clemens Heitzinger,
Siegfried Selberherr:
On the Topography Simulation of Memory Cell Trenches for Semiconductor Manufacturing Deposition Processes using the Level Set Method.
ESM 2002: 653-660 |
