| 2008 |
| 33 | EE | Zaid Al-Ars,
Said Hamdioui,
Georgi Gaydadjiev,
Stamatis Vassiliadis:
Test Set Development for Cache Memory in Modern Microprocessors.
IEEE Trans. VLSI Syst. 16(6): 725-732 (2008) |
| 2007 |
| 32 | | Zaid Al-Ars,
Said Hamdioui,
Georgi Gaydadjiev:
Manifestation of Precharge Faults in High Speed DRAM Devices.
DDECS 2007: 179-184 |
| 31 | EE | Said Hamdioui,
Zaid Al-Ars,
Javier Jiménez,
Jose Calero:
PPM Reduction on Embedded Memories in System on Chip.
European Test Symposium 2007: 85-90 |
| 30 | EE | Zaid Al-Ars,
Said Hamdioui,
Georgi Gaydadjiev:
Optimizing Test Length for Soft Faults in DRAM Devices.
VTS 2007: 59-66 |
| 2006 |
| 29 | EE | Zaid Al-Ars,
Said Hamdioui,
A. J. van de Goor:
Space of DRAM fault models and corresponding testing.
DATE 2006: 1252-1257 |
| 28 | EE | Said Hamdioui,
Zaid Al-Ars,
A. J. van de Goor:
Opens and Delay Faults in CMOS RAM Address Decoders.
IEEE Trans. Computers 55(12): 1630-1639 (2006) |
| 27 | EE | Zaid Al-Ars,
Said Hamdioui,
A. J. van de Goor,
Sultan M. Al-Harbi:
Influence of Bit-Line Coupling and Twisting on the Faulty Behavior of DRAMs.
IEEE Trans. on CAD of Integrated Circuits and Systems 25(12): 2989-2996 (2006) |
| 2005 |
| 26 | EE | Zaid Al-Ars,
Said Hamdioui,
Jörg E. Vollrath:
Investigations of Faulty DRAM Behavior Using Electrical Simulation Versus an Analytical Approach.
Asian Test Symposium 2005: 434-439 |
| 25 | EE | Zaid Al-Ars,
Said Hamdioui,
Georg Mueller,
A. J. van de Goor:
Framework for Fault Analysis and Test Generation in DRAMs.
DATE 2005: 1020-1021 |
| 2004 |
| 24 | EE | Said Hamdioui,
John Delos Reyes,
Zaid Al-Ars:
Evaluation of Intra-Word Faults in Word-Oriented RAMs.
Asian Test Symposium 2004: 283-288 |
| 23 | EE | Zaid Al-Ars,
A. J. van de Goor:
Soft Faults and the Importance of Stresses in Memory Testing.
DATE 2004: 1084-1091 |
| 22 | EE | A. J. van de Goor,
Said Hamdioui,
Zaid Al-Ars:
The Effectiveness of the Scan Test and Its New Variants.
MTDT 2004: 26-31 |
| 21 | EE | Zaid Al-Ars,
Martin Herzog,
Ivo Schanstra,
A. J. van de Goor:
Influence of Bit Line Twisting on the Faulty Behavior of DRAMs.
MTDT 2004: 32-37 |
| 20 | EE | Zaid Al-Ars,
Said Hamdioui,
A. J. van de Goor:
Effects of Bit Line Coupling on the Faulty Behavior of DRAMs.
VTS 2004: 117-122 |
| 19 | EE | Said Hamdioui,
Zaid Al-Ars,
A. J. van de Goor,
Mike Rodgers:
Linked faults in random access memories: concept, fault models, test algorithms, and industrial results.
IEEE Trans. on CAD of Integrated Circuits and Systems 23(5): 737-757 (2004) |
| 2003 |
| 18 | EE | Zaid Al-Ars,
A. J. van de Goor:
Analyzing the Impact of Process Variations on DRAM Testing Using Border Resistance Traces.
Asian Test Symposium 2003: 24-27 |
| 17 | EE | Said Hamdioui,
Zaid Al-Ars,
A. J. van de Goor,
Mike Rodgers:
March SL: A Test For All Static Linked Memory Faults.
Asian Test Symposium 2003: 372-377 |
| 16 | EE | Zaid Al-Ars,
A. J. van de Goor,
Jens Braun,
Detlev Richter:
Optimizing Stresses for Testing DRAM Cell Defects Using Electrical Simulation.
DATE 2003: 10484-10489 |
| 15 | EE | Zaid Al-Ars,
A. J. van de Goor:
Systematic Memory Test Generation for DRAM Defects Causing Two Floating Nodes.
MTDT 2003: 27-32 |
| 14 | EE | Zaid Al-Ars,
Said Hamdioui,
A. J. van de Goor:
A Fault Primitive Based Analysis of Linked Faults in RAMs.
MTDT 2003: 33- |
| 13 | EE | Zaid Al-Ars,
A. J. van de Goor:
Static and Dynamic Behavior of Memory Cell Array Spot Defects in Embedded DRAMs.
IEEE Trans. Computers 52(3): 293-309 (2003) |
| 12 | EE | Zaid Al-Ars,
A. J. van de Goor:
Test generation and optimization for DRAM cell defects using electrical simulation.
IEEE Trans. on CAD of Integrated Circuits and Systems 22(10): 1371-1384 (2003) |
| 11 | EE | Said Hamdioui,
Zaid Al-Ars,
A. J. van de Goor,
Mike Rodgers:
Dynamic Faults in Random-Access-Memories: Concept, Fault Models and Tests.
J. Electronic Testing 19(2): 195-205 (2003) |
| 2002 |
| 10 | EE | Zaid Al-Ars,
A. J. van de Goor:
DRAM Specific Approximation of the Faulty Behavior of Cell Defects.
Asian Test Symposium 2002: 98-103 |
| 9 | EE | Zaid Al-Ars,
A. J. van de Goor:
Modeling Techniques and Tests for Partial Faults in Memory Devices.
DATE 2002: 89-93 |
| 8 | EE | Said Hamdioui,
Zaid Al-Ars,
A. J. van de Goor:
Testing Static and Dynamic Faults in Random Access Memories.
VTS 2002: 395-400 |
| 7 | EE | Zaid Al-Ars,
A. J. van de Goor:
Approximating Infinite Dynamic Behavior for DRAM Cell Defects.
VTS 2002: 401-406 |
| 2001 |
| 6 | EE | Zaid Al-Ars,
A. J. van de Goor,
Jens Braun,
Detlev Richter:
A Memory Specific Notation for Fault Modeling.
Asian Test Symposium 2001: 43- |
| 5 | EE | Zaid Al-Ars,
A. J. van de Goor:
Static and dynamic behavior of memory cell array opens and shorts in embedded DRAMs.
DATE 2001: 496-503 |
| 4 | | Zaid Al-Ars,
A. J. van de Goor,
Jens Braun,
Detlev Richter:
Simulation based analysis of temperature effect on the faulty behavior of embedded DRAMs.
ITC 2001: 783-792 |
| 3 | EE | Zaid Al-Ars,
A. J. van de Goor:
Transient Faults in DRAMs: Concepts, Analysis and Impact on Tests.
MTDT 2001: 59-64 |
| 2000 |
| 2 | EE | Zaid Al-Ars,
A. J. van de Goor:
Impact of memory cell array bridges on the faulty behavior in embedded DRAMs.
Asian Test Symposium 2000: 282-289 |
| 1 | EE | A. J. van de Goor,
Zaid Al-Ars:
Functional Memory Faults: A Formal Notation and a Taxonomy.
VTS 2000: 281-290 |