| 2006 |
|---|
| 5 | EE | Alberto Castellazzi,
Martin Honsberg-Riedl,
Gerhard K. M. Wachutka:
Thermal characterisation of power devices during transient operation.
Microelectronics Journal 37(2): 145-151 (2006) |
| 4 | EE | Alberto Castellazzi,
Mauro Ciappa,
Wolfgang Fichtner,
G. Lourdel,
Michel Mermet-Guyennet:
Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications.
Microelectronics Reliability 46(9-11): 1754-1759 (2006) |
| 3 | EE | D. Barlini,
Mauro Ciappa,
Alberto Castellazzi,
Michel Mermet-Guyennet,
Wolfgang Fichtner:
New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions.
Microelectronics Reliability 46(9-11): 1772-1777 (2006) |
| 2003 |
|---|
| 2 | EE | Alberto Castellazzi,
V. Kartal,
R. Kraus,
N. Seliger,
Martin Honsberg-Riedl,
Doris Schmitt-Landsiedel:
Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET's.
Microelectronics Reliability 43(9-11): 1877-1882 (2003) |
| 2002 |
|---|
| 1 | EE | Alberto Castellazzi,
R. Kraus,
N. Seliger,
Doris Schmitt-Landsiedel:
Reliability analysis of power MOSFET's with the help of compact models and circuit simulation.
Microelectronics Reliability 42(9-11): 1605-1610 (2002) |
