2006 | ||
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2 | EE | J. M. Rafí, E. Simoen, K. Hayama, A. Mercha, F. Campabadal, H. Ohyama, C. Claeys: Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs. Microelectronics Reliability 46(9-11): 1657-1663 (2006) |
2002 | ||
1 | EE | J. M. Rafí, B. Vergnet, F. Campabadal, C. Fleta, L. Fonseca, M. Lozano, C. Martínez, M. Ullán: Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides. Microelectronics Reliability 42(9-11): 1501-1504 (2002) |
1 | C. Claeys | [2] |
2 | C. Fleta | [1] |
3 | L. Fonseca | [1] |
4 | K. Hayama | [2] |
5 | M. Lozano | [1] |
6 | C. Martínez | [1] |
7 | A. Mercha | [2] |
8 | H. Ohyama | [2] |
9 | J. M. Rafí | [1] [2] |
10 | E. Simoen | [2] |
11 | M. Ullán | [1] |
12 | B. Vergnet | [1] |