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F. Campabadal

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2006
2EEJ. M. Rafí, E. Simoen, K. Hayama, A. Mercha, F. Campabadal, H. Ohyama, C. Claeys: Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs. Microelectronics Reliability 46(9-11): 1657-1663 (2006)
2002
1EEJ. M. Rafí, B. Vergnet, F. Campabadal, C. Fleta, L. Fonseca, M. Lozano, C. Martínez, M. Ullán: Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides. Microelectronics Reliability 42(9-11): 1501-1504 (2002)

Coauthor Index

1C. Claeys [2]
2C. Fleta [1]
3L. Fonseca [1]
4K. Hayama [2]
5M. Lozano [1]
6C. Martínez [1]
7A. Mercha [2]
8H. Ohyama [2]
9J. M. Rafí [1] [2]
10E. Simoen [2]
11M. Ullán [1]
12B. Vergnet [1]

Copyright © Sun May 17 03:24:02 2009 by Michael Ley (ley@uni-trier.de)