| 2006 |
|---|
| 6 | EE | Alberto Castellazzi,
Martin Honsberg-Riedl,
Gerhard K. M. Wachutka:
Thermal characterisation of power devices during transient operation.
Microelectronics Journal 37(2): 145-151 (2006) |
| 2004 |
|---|
| 5 | EE | Robert K. Thalhammer,
Gerhard K. M. Wachutka:
Physically rigorous modeling of internal laser-probing techniques for microstructured semiconductor devices.
IEEE Trans. on CAD of Integrated Circuits and Systems 23(1): 60-70 (2004) |
| 4 | EE | Robert K. Thalhammer,
Gerhard K. M. Wachutka:
Corrections to "Physically Rigorous Modeling of Internal Laser-Probing Techniques for Microstructured Semiconductor Devices".
IEEE Trans. on CAD of Integrated Circuits and Systems 23(4): 581-582 (2004) |
| 2003 |
|---|
| 3 | EE | A. Icaza Deckelmann,
Gerhard K. M. Wachutka,
F. Hirler,
J. Krumrey,
R. Henninger:
Avalanche breakdown capability of Power DMOS Transistors and the Wunsch-Bell relation.
Microelectronics Reliability 43(9-11): 1895-1900 (2003) |
| 1994 |
|---|
| 2 | EE | Philip B. M. Wolbert,
Gerhard K. M. Wachutka,
Benno H. Krabbenborg,
Ton J. Mouthaan:
Nonisothermal device simulation using the 2D numerical process/device simulator TRENDY and application to SOI-devices.
IEEE Trans. on CAD of Integrated Circuits and Systems 13(3): 293-302 (1994) |
| 1990 |
|---|
| 1 | EE | Gerhard K. M. Wachutka:
Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling.
IEEE Trans. on CAD of Integrated Circuits and Systems 9(11): 1141-1149 (1990) |
