| 2008 |
|---|
| 3 | EE | T. P. Ma:
Novel electrical characterization for advanced CMOS gate dielectrics.
Science in China Series F: Information Sciences 51(6): 774-779 (2008) |
| 2003 |
|---|
| 2 | EE | T. P. Ma:
Gate dielectrics for Si, SiC, and GaN as synthesized by jet vapor deposition.
Microelectronics Journal 34(5-8): 363-370 (2003) |
| 2002 |
|---|
| 1 | EE | Carlton M. Osburn,
Indong Kim,
Sungkee Han,
Indranil De,
Kam F. Yee,
Shyam Gannavaram,
SungJoo Lee,
Chung-Ho Lee,
Zhijiong J. Luo,
Wenjuan Zhu,
John R. Hauser,
Dim-Lee Kwong,
Gerald Lucovsky,
T. P. Ma,
Mehmet C. Öztürk:
Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?
IBM Journal of Research and Development 46(2-3): 299-316 (2002) |
