| 2008 |
|---|
| 10 | EE | A. Ney,
Patrick Girard,
Serge Pravossoudovitch,
Arnaud Virazel,
Magali Bastian,
V. Gouin:
A Design-for-Diagnosis Technique for SRAM Write Drivers.
DATE 2008: 1480-1485 |
| 9 | EE | Michael Yap San Min,
Philippe Maurine,
Magali Bastian,
Michel Robert:
A Novel Dummy Bitline Driver for Read Margin Improvement in an eSRAM.
DELTA 2008: 107-110 |
| 8 | EE | Michael Yap San Min,
Philippe Maurine,
Magali Bastian,
Michel Robert:
Statistical Sizing of an eSRAM Dummy Bitline Driver for Read Margin Improvement in the Presence of Variability Aspects.
ISVLSI 2008: 310-315 |
| 7 | EE | A. Ney,
Patrick Girard,
Serge Pravossoudovitch,
Arnaud Virazel,
Magali Bastian,
V. Gouin:
An SRAM Design-for-Diagnosis Solution Based on Write Driver Voltage Sensing.
VTS 2008: 89-94 |
| 2007 |
|---|
| 6 | EE | A. Ney,
Patrick Girard,
Christian Landrault,
Serge Pravossoudovitch,
Arnaud Virazel,
Magali Bastian:
Slow write driver faults in 65nm SRAM technology: analysis and March test solution.
DATE 2007: 528-533 |
| 5 | EE | A. Ney,
Patrick Girard,
Christian Landrault,
Serge Pravossoudovitch,
Arnaud Virazel,
Magali Bastian:
Dynamic Two-Cell Incorrect Read Fault Due to Resistive-Open Defects in the Sense Amplifiers of SRAMs.
European Test Symposium 2007: 97-104 |
| 4 | EE | A. Ney,
Patrick Girard,
Christian Landrault,
Serge Pravossoudovitch,
Arnaud Virazel,
Magali Bastian:
Un-Restored Destructive Write Faults Due to Resistive-Open Defects in the Write Driver of SRAMs.
VTS 2007: 361-368 |
| 3 | EE | Luigi Dilillo,
Patrick Girard,
Serge Pravossoudovitch,
Arnaud Virazel,
Magali Bastian:
Analysis and Test of Resistive-Open Defects in SRAM Pre-Charge Circuits.
J. Electronic Testing 23(5): 435-444 (2007) |
| 2006 |
|---|
| 2 | | Luigi Dilillo,
Patrick Girard,
Serge Pravossoudovitch,
Arnaud Virazel,
Magali Bastian:
March Pre: an Efficient Test for Resistive-Open Defects in the SRAM Pre-charge Circuit.
DDECS 2006: 256-261 |
| 2005 |
|---|
| 1 | EE | Luigi Dilillo,
Patrick Girard,
Serge Pravossoudovitch,
Arnaud Virazel,
Magali Bastian:
Resistive-open defect injection in SRAM core-cell: analysis and comparison between 0.13 µm and 90 nm technologies.
DAC 2005: 857-862 |
