2003 |
3 | EE | F. Velardi,
F. Iannuzzo,
G. Busatto,
J. Wyss,
A. Candelori:
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact, .
Microelectronics Reliability 43(4): 549-555 (2003) |
2 | EE | F. Velardi,
F. Iannuzzo,
G. Busatto,
J. Wyss,
A. Sanseverino,
A. Candelori,
G. Currò,
A. Cascio,
F. Frisina:
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment.
Microelectronics Reliability 43(9-11): 1847-1851 (2003) |
2002 |
1 | EE | F. Velardi,
F. Iannuzzo,
G. Busatto,
J. Wyss,
A. Kaminksy:
The Reliability of New Generation Power MOSFETs in Radiation Environment.
Microelectronics Reliability 42(9-11): 1629-1634 (2002) |