| 2008 |
|---|
| 8 | EE | W. M. Tang,
C. H. Leung,
P. T. Lai:
Effects of Insulator Thickness on the Sensing Properties of MISiC Schottky-Diode Hydrogen Sensor.
DELTA 2008: 171-174 |
| 2007 |
|---|
| 7 | EE | X. Zou,
J. P. Xu,
C. X. Li,
P. T. Lai,
W. B. Chen:
A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer.
Microelectronics Reliability 47(2-3): 391-394 (2007) |
| 2006 |
|---|
| 6 | EE | B. L. Yang,
Paul C. K. Kwok,
P. T. Lai:
Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection.
Microelectronics Reliability 46(12): 2044-2048 (2006) |
| 2004 |
|---|
| 5 | EE | P. T. Lai,
J. P. Xu,
H. P. Wu,
C. L. Chan:
Interfacial properties and reliability of SiO2 grown on 6H-SiC in dry O2 plus trichloroethylene.
Microelectronics Reliability 44(4): 577-580 (2004) |
| 4 | EE | B. L. Yang,
P. T. Lai,
H. Wong:
Conduction mechanisms in MOS gate dielectric films.
Microelectronics Reliability 44(5): 709-718 (2004) |
| 2003 |
|---|
| 3 | EE | David C. T. Or,
P. T. Lai,
J. K. O. Sin,
Paul C. K. Kwok,
J. P. Xu:
Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation.
Microelectronics Reliability 43(1): 163-166 (2003) |
| 2002 |
|---|
| 2 | EE | B. L. Yang,
N. W. Cheung,
S. Denholm,
J. Shao,
H. Wong,
P. T. Lai,
Y. C. Cheng:
Ultra-shallow n+p junction formed by PH3 and AsH3 plasma immersion ion implantation.
Microelectronics Reliability 42(12): 1985-1989 (2002) |
| 1 | EE | S. Chakraborty,
P. T. Lai,
Paul C. K. Kwok:
MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC.
Microelectronics Reliability 42(3): 455-458 (2002) |
