2006 |
3 | EE | B. L. Yang,
Paul C. K. Kwok,
P. T. Lai:
Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection.
Microelectronics Reliability 46(12): 2044-2048 (2006) |
2004 |
2 | EE | B. L. Yang,
P. T. Lai,
H. Wong:
Conduction mechanisms in MOS gate dielectric films.
Microelectronics Reliability 44(5): 709-718 (2004) |
2002 |
1 | EE | B. L. Yang,
N. W. Cheung,
S. Denholm,
J. Shao,
H. Wong,
P. T. Lai,
Y. C. Cheng:
Ultra-shallow n+p junction formed by PH3 and AsH3 plasma immersion ion implantation.
Microelectronics Reliability 42(12): 1985-1989 (2002) |