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B. L. Yang

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2006
3EEB. L. Yang, Paul C. K. Kwok, P. T. Lai: Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection. Microelectronics Reliability 46(12): 2044-2048 (2006)
2004
2EEB. L. Yang, P. T. Lai, H. Wong: Conduction mechanisms in MOS gate dielectric films. Microelectronics Reliability 44(5): 709-718 (2004)
2002
1EEB. L. Yang, N. W. Cheung, S. Denholm, J. Shao, H. Wong, P. T. Lai, Y. C. Cheng: Ultra-shallow n+p junction formed by PH3 and AsH3 plasma immersion ion implantation. Microelectronics Reliability 42(12): 1985-1989 (2002)

Coauthor Index

1Y. C. Cheng [1]
2N. W. Cheung [1]
3S. Denholm [1]
4Paul C. K. Kwok [3]
5P. T. Lai [1] [2] [3]
6J. Shao [1]
7H. Wong [1] [2]

Copyright © Sun May 17 03:24:02 2009 by Michael Ley (ley@uni-trier.de)