2007 |
3 | EE | X. Zou,
J. P. Xu,
C. X. Li,
P. T. Lai,
W. B. Chen:
A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer.
Microelectronics Reliability 47(2-3): 391-394 (2007) |
2004 |
2 | EE | P. T. Lai,
J. P. Xu,
H. P. Wu,
C. L. Chan:
Interfacial properties and reliability of SiO2 grown on 6H-SiC in dry O2 plus trichloroethylene.
Microelectronics Reliability 44(4): 577-580 (2004) |
2003 |
1 | EE | David C. T. Or,
P. T. Lai,
J. K. O. Sin,
Paul C. K. Kwok,
J. P. Xu:
Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation.
Microelectronics Reliability 43(1): 163-166 (2003) |