2009 |
11 | EE | Shunsuke Okumura,
Yusuke Iguchi,
Shusuke Yoshimoto,
Hidehiro Fujiwara,
Hiroki Noguchi,
Koji Nii,
Hiroshi Kawaguchi,
Masahiko Yoshimoto:
A 0.56-V 128kb 10T SRAM using column line assist (CLA) scheme.
ISQED 2009: 659-663 |
2008 |
10 | EE | Hidehiro Fujiwara,
Koji Nii,
Hiroki Noguchi,
Junichi Miyakoshi,
Yuichiro Murachi,
Yasuhiro Morita,
Hiroshi Kawaguchi,
Masahiko Yoshimoto:
Novel Video Memory Reduces 45% of Bitline Power Using Majority Logic and Data-Bit Reordering.
IEEE Trans. VLSI Syst. 16(6): 620-627 (2008) |
9 | EE | Hiroki Noguchi,
Yusuke Iguchi,
Hidehiro Fujiwara,
Shunsuke Okumura,
Yasuhiro Morita,
Koji Nii,
Hiroshi Kawaguchi,
Masahiko Yoshimoto:
A 10T Non-precharge Two-Port SRAM Reducing Readout Power for Video Processing.
IEICE Transactions 91-C(4): 543-552 (2008) |
2007 |
8 | EE | Hiroki Noguchi,
Yusuke Iguchi,
Hidehiro Fujiwara,
Yasuhiro Morita,
Koji Nii,
Hiroshi Kawaguchi,
Masahiko Yoshimoto:
A 10T Non-Precharge Two-Port SRAM for 74% Power Reduction in Video Processing.
ISVLSI 2007: 107-112 |
7 | EE | Yasuhiro Morita,
Hidehiro Fujiwara,
Hiroki Noguchi,
Yusuke Iguchi,
Koji Nii,
Hiroshi Kawaguchi,
Masahiko Yoshimoto:
Area Comparison between 6T and 8T SRAM Cells in Dual-Vdd Scheme and DVS Scheme.
IEICE Transactions 90-A(12): 2695-2702 (2007) |
6 | EE | Yasuhiro Morita,
Hidehiro Fujiwara,
Hiroki Noguchi,
Yusuke Iguchi,
Koji Nii,
Hiroshi Kawaguchi,
Masahiko Yoshimoto:
Area Optimization in 6T and 8T SRAM Cells Considering Vth Variation in Future Processes.
IEICE Transactions 90-C(10): 1949-1956 (2007) |
2006 |
5 | EE | Hidehiro Fujiwara,
Koji Nii,
Junichi Miyakoshi,
Yuichiro Murachi,
Yasuhiro Morita,
Hiroshi Kawaguchi,
Masahiko Yoshimoto:
A two-port SRAM for real-time video processor saving 53% of bitline power with majority logic and data-bit reordering.
ISLPED 2006: 61-66 |
4 | EE | Yasuhiro Morita,
Hidehiro Fujiwara,
Hiroki Noguchi,
Kentaro Kawakami,
Junichi Miyakoshi,
Shinji Mikami,
Koji Nii,
Hiroshi Kawaguchi,
Masahiko Yoshimoto:
A 0.3-V Operating, Vth-Variation-Tolerant SRAM under DVS Environment for Memory-Rich SoC in 90-nm Technology Era and Beyond.
IEICE Transactions 89-A(12): 3634-3641 (2006) |
2005 |
3 | | Yasumasa Tsukamoto,
Koji Nii,
Susumu Imaoka,
Yuji Oda,
Shigeki Ohbayashi,
Tomoaki Yoshizawa,
Hiroshi Makino,
Koichiro Ishibashi,
Hirofumi Shinohara:
Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability.
ICCAD 2005: 398-405 |
2 | EE | Niichi Itoh,
Yasumasa Tsukamoto,
Takeshi Shibagaki,
Koji Nii,
Hidehiro Takata,
Hiroshi Makino:
A 32×24-bit multiplier-accumulator with advanced rectangular styled Wallace-tree structure.
ISCAS (1) 2005: 73-76 |
1998 |
1 | EE | Koji Nii,
Hiroshi Makino,
Yoshiki Tujihashi,
Chikayoshi Morishima,
Yasushi Hayakawa,
Hiroyuki Nunogami,
Takahiko Arakawa,
Hisanori Hamano:
A low power SRAM using auto-backgate-controlled MT-CMOS.
ISLPED 1998: 293-298 |