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2007 | ||
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1 | EE | W. S. Lau, P. W. Qian, Taejoon Han, Nathan P. Sandler, S. T. Che, S. E. Ang, C. H. Tung, T. T. Sheng: Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si. Microelectronics Reliability 47(2-3): 429-433 (2007) |
1 | S. E. Ang | [1] |
2 | S. T. Che | [1] |
3 | Taejoon Han | [1] |
4 | W. S. Lau | [1] |
5 | P. W. Qian | [1] |
6 | Nathan P. Sandler | [1] |
7 | C. H. Tung | [1] |