S. T. Che

2007
1	EE	W. S. Lau, P. W. Qian, Taejoon Han, Nathan P. Sandler, S. T. Che, S. E. Ang, C. H. Tung, T. T. Sheng: Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si. Microelectronics Reliability 47(2-3): 429-433 (2007)

Coauthor Index

1	S. E. Ang	[1]
2	Taejoon Han	[1]
3	W. S. Lau	[1]
4	P. W. Qian	[1]
5	Nathan P. Sandler	[1]
6	T. T. Sheng	[1]
7	C. H. Tung	[1]