| |
| 2003 | ||
|---|---|---|
| 2 | EE | K. L. Pey, C. H. Tung, M. K. Radhakrishnan, L. J. Tang, Y. Sun, X. D. Wang, W. H. Lin: Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM. Microelectronics Reliability 43(9-11): 1471-1476 (2003) |
| 2002 | ||
| 1 | EE | M. K. Radhakrishnan, K. L. Pey, C. H. Tung, W. H. Lin: Physical analysis of hard and soft breakdown failures in ultrathin gate oxides. Microelectronics Reliability 42(4-5): 565-571 (2002) |
| 1 | K. L. Pey | [1] [2] |
| 2 | M. K. Radhakrishnan | [1] [2] |
| 3 | Y. Sun | [2] |
| 4 | L. J. Tang | [2] |
| 5 | C. H. Tung | [1] [2] |
| 6 | X. D. Wang | [2] |