| 2004 |
|---|
| 4 | EE | X. Perpiñà,
X. Jordà,
N. Mestres,
M. Vellvehí,
Philippe Godignon,
J. Millán:
Self-heating experimental study of 600V PT-IGBTs under low dissipation energies.
Microelectronics Journal 35(10): 841-847 (2004) |
| 3 | EE | M. Vellvehí,
D. Flores,
X. Jordà,
S. Hidalgo,
J. Rebollo,
L. Coulbeck,
P. Waind:
Design considerations for 6.5 kV IGBT devices.
Microelectronics Journal 35(3): 269-275 (2004) |
| 2 | EE | A. Pérez-Tomás,
X. Jordà,
Philippe Godignon,
J. L. Gálvez,
M. Vellvehí,
J. Millán:
IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.
Microelectronics Journal 35(8): 659-666 (2004) |
| 2001 |
|---|
| 1 | EE | José Luis Merino,
Sebastià A. Bota,
A. Herms,
Josep Samitier,
Enric Cabruja,
X. Jordà,
M. Vellvehí,
J. Bausells,
A. Ferré,
J. Bigorr:
Smart Temperature Sensor for On-Line Monitoring in Automotive Applications.
IOLTW 2001: 122-126 |
