| |
| 2006 | ||
|---|---|---|
| 1 | EE | T. Pompl, A. Kerber, M. Röhner, M. Kerber: Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides. Microelectronics Reliability 46(9-11): 1603-1607 (2006) |
| 1 | M. Kerber | [1] |
| 2 | T. Pompl | [1] |
| 3 | M. Röhner | [1] |