| 2003 |
|---|
| 4 | EE | Ernest Y. Wu,
Jordi Suñé,
Wing L. Lai,
Alex Vayshenker,
Edward J. Nowak,
David L. Harmon:
Critical reliability challenges in scaling SiO2-based dielectric to its limit.
Microelectronics Reliability 43(8): 1175-1184 (2003) |
| 3 | EE | Jordi Suñé,
Ernest Y. Wu,
D. Jiménez,
Wing L. Lai:
Statistics of soft and hard breakdown in thin SiO2 gate oxides.
Microelectronics Reliability 43(8): 1185-1192 (2003) |
| 2002 |
|---|
| 2 | EE | Ernest Y. Wu,
Edward J. Nowak,
Alex Vayshenker,
Wing L. Lai,
David L. Harmon:
CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics.
IBM Journal of Research and Development 46(2-3): 287-298 (2002) |
| 1 | EE | Fen Chen,
Rolf-Peter Vollertsen,
Baozhen Li,
Dave Harmon,
Wing L. Lai:
A new empirical extrapolation method for time-dependent dielectric breakdown reliability projections of thin SiO2 and nitride-oxide dielectrics.
Microelectronics Reliability 42(3): 335-341 (2002) |
