2007 |
5 | EE | M. A. Belaïd,
K. Ketata,
K. Mourgues,
M. Gares,
M. Masmoudi,
J. Marcon:
Reliability study of power RF LDMOS device under thermal stress.
Microelectronics Journal 38(2): 164-170 (2007) |
4 | EE | M. A. Belaïd,
K. Ketata,
M. Gares,
K. Mourgues,
M. Masmoudi,
J. Marcon:
Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests.
Microelectronics Reliability 47(1): 59-64 (2007) |
2006 |
3 | EE | M. Gares,
H. Maanane,
M. A. Belaïd,
M. Masmoudi,
J. Marcon,
K. Mourgues,
P. Bertram,
Ph. Eudeline:
Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance.
CCECE 2006: 382-385 |
2 | EE | M. A. Belaïd,
K. Ketata,
M. Masmoudi,
M. Gares,
H. Maanane,
J. Marcon:
Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests.
Microelectronics Reliability 46(9-11): 1800-1805 (2006) |
1 | EE | M. Gares,
H. Maanane,
M. Masmoudi,
P. Bertram,
J. Marcon,
M. A. Belaïd,
K. Mourgues,
C. Tolant,
Ph. Eudeline:
Hot carrier reliability of RF N- LDMOS for S Band radar application.
Microelectronics Reliability 46(9-11): 1806-1811 (2006) |