2006 |
6 | EE | Josh Yang,
Baosheng Wang,
Yuejian Wu,
André Ivanov:
Fast detection of data retention faults and other SRAM cell open defects.
IEEE Trans. on CAD of Integrated Circuits and Systems 25(1): 167-180 (2006) |
2005 |
5 | EE | Baosheng Wang,
Josh Yang,
Yuejian Wu,
André Ivanov:
A retention-aware test power model for embedded SRAM.
ASP-DAC 2005: 1180-1183 |
4 | EE | Baosheng Wang,
Yuejian Wu,
Josh Yang,
André Ivanov,
Yervant Zorian:
SRAM Retention Testing: Zero Incremental Time Integration with March Algorithms.
VTS 2005: 66-71 |
2004 |
3 | EE | Josh Yang,
Baosheng Wang,
André Ivanov:
Open Defects Detection within 6T SRAM Cells using a No Write Recovery Test Mode.
VLSI Design 2004: 493-498 |
2 | EE | Baosheng Wang,
Josh Yang,
James Cicalo,
André Ivanov,
Yervant Zorian:
Reducing Embedded SRAM Test Time under Redundancy Constraints.
VTS 2004: 237-242 |
2003 |
1 | EE | Baosheng Wang,
Josh Yang,
André Ivanov:
Reducing Test Time of Embedded SRAMs.
MTDT 2003: 47-52 |