G. Redin

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2002

1 EE E. Miranda, G. Redin, A. Faigón: Modeling of the I-V characteristics of high-field stressed MOS structures using a Fowler-Nordheim-type tunneling expression. Microelectronics Reliability 42(6): 935-941 (2002)

2002
1	EE	E. Miranda, G. Redin, A. Faigón: Modeling of the I-V characteristics of high-field stressed MOS structures using a Fowler-Nordheim-type tunneling expression. Microelectronics Reliability 42(6): 935-941 (2002)

Coauthor Index

1 A. Faigón [1]

2 E. Miranda [1]