| 2002 |
|---|
| 9 | EE | Mark E. Law:
Process modeling for future technologies.
IBM Journal of Research and Development 46(2-3): 339-346 (2002) |
| 1996 |
|---|
| 8 | EE | Chih-Chuan Lin,
Mark E. Law:
2-D mesh adaption and flux discretizations for dopant diffusion modeling.
IEEE Trans. on CAD of Integrated Circuits and Systems 15(2): 194-207 (1996) |
| 1995 |
|---|
| 7 | EE | Mark E. Law:
Grid adaption near moving boundaries in two dimensions for IC process simulation.
IEEE Trans. on CAD of Integrated Circuits and Systems 14(10): 1223-1230 (1995) |
| 1994 |
|---|
| 6 | EE | Martin D. Giles,
Duane S. Boning,
Goodwin R. Chin,
Walter C. Dietrich Jr.,
Michael S. Karasick,
Mark E. Law,
Purnendu K. Mozumder,
Lee R. Nackman,
V. T. Rajan,
Duncan M. Hank Walker,
Robert H. Wang,
Alexander S. Wong:
Semiconductor wafer representation for TCAD.
IEEE Trans. on CAD of Integrated Circuits and Systems 13(1): 82-95 (1994) |
| 5 | EE | Minchang Liang,
Mark E. Law:
An object-oriented approach to device simulation-FLOODS.
IEEE Trans. on CAD of Integrated Circuits and Systems 13(10): 1235-1240 (1994) |
| 1993 |
|---|
| 4 | EE | Chih-Chuan Lin,
Mark E. Law,
Rex E. Lowther:
Automatic grid refinement and higher order flux discretization for diffusion modeling.
IEEE Trans. on CAD of Integrated Circuits and Systems 12(8): 1209-1216 (1993) |
| 1992 |
|---|
| 3 | EE | Deodatta R. Apte,
Mark E. Law:
Comparison of iterative methods for AC analysis in PISCES-IIB.
IEEE Trans. on CAD of Integrated Circuits and Systems 11(5): 671-673 (1992) |
| 1991 |
|---|
| 2 | EE | Mark E. Law:
Parameters for point-defect diffusion and recombination.
IEEE Trans. on CAD of Integrated Circuits and Systems 10(9): 1125-1131 (1991) |
| 1988 |
|---|
| 1 | EE | Mark E. Law,
Robert W. Dutton:
Verification of analytic point defect models using SUPREM-IV [dopant diffusion].
IEEE Trans. on CAD of Integrated Circuits and Systems 7(2): 181-190 (1988) |
