1994 |
6 | | R. Kent Smith,
William M. Coughran Jr.:
Computational Challenges in Simulations of ULSI Semiconductor Devices.
HICSS (1) 1994: 7-15 |
1991 |
5 | EE | William M. Coughran Jr.,
Mark R. Pinto,
R. Kent Smith:
Adaptive grid generation for VSLI device simulation.
IEEE Trans. on CAD of Integrated Circuits and Systems 10(10): 1259-1275 (1991) |
1989 |
4 | EE | Franco Venturi,
R. Kent Smith,
Enrico Sangiorgi,
Mark R. Pinto,
Bruno Riccò:
A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs.
IEEE Trans. on CAD of Integrated Circuits and Systems 8(4): 360-369 (1989) |
3 | EE | Josef F. Burgler,
Randolph E. Bank,
Wolfgang Fichtner,
R. Kent Smith:
A new discretization scheme for the semiconductor current continuity equations.
IEEE Trans. on CAD of Integrated Circuits and Systems 8(5): 479-489 (1989) |
1988 |
2 | EE | William M. Coughran Jr.,
Mark R. Pinto,
R. Kent Smith:
Computation of steady-state CMOS latchup characteristics.
IEEE Trans. on CAD of Integrated Circuits and Systems 7(2): 307-323 (1988) |
1985 |
1 | EE | Randolph E. Bank,
William M. Coughran Jr.,
Wolfgang Fichtner,
Eric Grosse,
Donald J. Rose,
R. Kent Smith:
Transient Simulation of Silicon Devices and Circuits.
IEEE Trans. on CAD of Integrated Circuits and Systems 4(4): 436-451 (1985) |