| |
| 2006 | ||
|---|---|---|
| 2 | EE | M. I. Vexler, A. El Hdiy, D. Grgec, S. E. Tyaginov, R. Khlil, Bernd Meinerzhagen, A. F. Shulekin, I. V. Grekhov: Tunnel charge transport within silicon in reversely-biased MOS tunnel structures. Microelectronics Journal 37(2): 114-120 (2006) |
| 2004 | ||
| 1 | EE | R. Khlil, A. El Hdiy, A. F. Shulekin, S. E. Tyaginov, M. I. Vexler: Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness. Microelectronics Reliability 44(3): 543-546 (2004) |
| 1 | I. V. Grekhov | [2] |
| 2 | D. Grgec | [2] |
| 3 | R. Khlil | [1] [2] |
| 4 | Bernd Meinerzhagen | [2] |
| 5 | A. F. Shulekin | [1] [2] |
| 6 | S. E. Tyaginov | [1] [2] |
| 7 | M. I. Vexler | [1] [2] |