| |
| 2007 | ||
|---|---|---|
| 2 | EE | R. Kinder, F. Schwierz, P. Beno, J. Geßner: Simulation of boron diffusion in Si and strained SiGe layers. Microelectronics Journal 38(4-5): 576-582 (2007) |
| 2006 | ||
| 1 | EE | R. Kinder, A. Vincze, M. Kuruc, R. Srnánek, B. Lojek, B. Sopko, D. Chren: Investigation of the implanted phosphorus in a boron doped SiGe epitaxial layer. Microelectronics Journal 37(7): 642-645 (2006) |
| 1 | P. Beno | [2] |
| 2 | D. Chren | [1] |
| 3 | J. Geßner | [2] |
| 4 | M. Kuruc | [1] |
| 5 | B. Lojek | [1] |
| 6 | F. Schwierz | [2] |
| 7 | B. Sopko | [1] |
| 8 | R. Srnánek | [1] |
| 9 | A. Vincze | [1] |