| 2007 |
|---|
| 4 | EE | M. Troudi,
N. Sghaier,
A. Boubaker,
A. Souifi,
A. Kalboussi:
Macro-modeling for the compact simulation of single electron transistor using SIMPLORER.
Microelectronics Journal 38(12): 1156-1160 (2007) |
| 3 | EE | N. Sghaier,
L. Militaru,
M. Trabelsi,
N. Yacoubi,
A. Souifi:
Analysis of slow traps centres in submicron MOSFETs by random telegraph signal technique.
Microelectronics Journal 38(4-5): 610-614 (2007) |
| 2 | EE | A. Boubaker,
N. Sghaier,
M. Troudi,
A. Kalboussi,
N. Baboux,
A. Souifi:
A new SIMPLORER model for single-electron transistors.
Microelectronics Journal 38(8-9): 894-899 (2007) |
| 2006 |
|---|
| 1 | EE | N. Sghaier,
M. Trabelsi,
N. Yacoubi,
J. M. Bluet,
A. Souifi,
G. Guillot,
C. Gaquière,
J. C. DeJaeger:
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates.
Microelectronics Journal 37(4): 363-370 (2006) |
