| |
| 2006 | ||
|---|---|---|
| 1 | EE | N. Sghaier, M. Trabelsi, N. Yacoubi, J. M. Bluet, A. Souifi, G. Guillot, C. Gaquière, J. C. DeJaeger: Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. Microelectronics Journal 37(4): 363-370 (2006) |
| 1 | J. M. Bluet | [1] |
| 2 | J. C. DeJaeger | [1] |
| 3 | C. Gaquière | [1] |
| 4 | N. Sghaier | [1] |
| 5 | A. Souifi | [1] |
| 6 | M. Trabelsi | [1] |
| 7 | N. Yacoubi | [1] |