2006 | ||
---|---|---|
2 | EE | Y. C. Chou, D. Leung, R. Grundbacher, R. Lai, Q. Kan, P. H. Liu, D. Eng, T. Block, A. Oki: Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs. Microelectronics Reliability 46(1): 24-40 (2006) |
2004 | ||
1 | EE | Y. C. Chou, D. Leung, I. Smorchkova, M. Wojtowicz, R. Grundbacher, L. Callejo, Q. Kan, R. Lai, P. H. Liu, D. Eng: Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting. Microelectronics Reliability 44(7): 1033-1038 (2004) |
1 | T. Block | [2] |
2 | L. Callejo | [1] |
3 | Y. C. Chou | [1] [2] |
4 | R. Grundbacher | [1] [2] |
5 | Q. Kan | [1] [2] |
6 | R. Lai | [1] [2] |
7 | D. Leung | [1] [2] |
8 | P. H. Liu | [1] [2] |
9 | A. Oki | [2] |
10 | I. Smorchkova | [1] |
11 | M. Wojtowicz | [1] |