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| 2006 | ||
|---|---|---|
| 2 | EE | Y. C. Chou, D. Leung, R. Grundbacher, R. Lai, Q. Kan, P. H. Liu, D. Eng, T. Block, A. Oki: Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs. Microelectronics Reliability 46(1): 24-40 (2006) |
| 2004 | ||
| 1 | EE | Y. C. Chou, D. Leung, I. Smorchkova, M. Wojtowicz, R. Grundbacher, L. Callejo, Q. Kan, R. Lai, P. H. Liu, D. Eng: Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting. Microelectronics Reliability 44(7): 1033-1038 (2004) |
| 1 | T. Block | [2] |
| 2 | L. Callejo | [1] |
| 3 | D. Eng | [1] [2] |
| 4 | R. Grundbacher | [1] [2] |
| 5 | Q. Kan | [1] [2] |
| 6 | R. Lai | [1] [2] |
| 7 | D. Leung | [1] [2] |
| 8 | P. H. Liu | [1] [2] |
| 9 | A. Oki | [2] |
| 10 | I. Smorchkova | [1] |
| 11 | M. Wojtowicz | [1] |