| 2006 |
|---|
| 5 | EE | B. Saillet,
A. Regnier,
Jean Michel Portal,
B. Delsuc,
R. Laffont,
Pascal Masson,
Rachid Bouchakour:
MM11 based flash memory cell model including characterization procedure.
ISCAS 2006 |
| 2005 |
|---|
| 4 | EE | Fabien Gilibert,
Denis Rideau,
Alexandre Dray,
Francois Agut,
Michel Minondo,
Andre Juge,
Pascal Masson,
Rachid Bouchakour:
Characterization and Modeling of Gate-Induced-Drain-Leakage.
IEICE Transactions 88-C(5): 829-837 (2005) |
| 2002 |
|---|
| 3 | EE | R. Laffont,
J. Razafindramora,
P. Canet,
Rachid Bouchakour,
J. M. Mirabel:
Decreasing EEPROM Programming Bias With Negative Voltage, Reliability Impact.
MTDT 2002: 168-176 |
| 2001 |
|---|
| 2 | EE | Rachid Bouchakour,
N. Harabech,
P. Canet,
Ph. Boivin,
J. M. Mirabel:
Modeling of a floating-gate EEPROM cell using a charge sheet approach including variable tunneling capacitance and polysilicon gate depletion effect.
ISCAS (4) 2001: 822-825 |
| 1 | EE | P. Canet,
Rachid Bouchakour,
N. Harabech,
Ph. Boivin,
J. M. Mirabel:
EEPROM programming study-time and degradation aspects.
ISCAS (4) 2001: 846-849 |
