A. Paskaleva

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2002

1 EE E. Atanassova, A. Paskaleva: Breakdown fields and conduction mechanisms in thin Ta₂O₅ layers on Si for high density DRAMs. Microelectronics Reliability 42(2): 157-173 (2002)

2002
1	EE	E. Atanassova, A. Paskaleva: Breakdown fields and conduction mechanisms in thin Ta₂O₅ layers on Si for high density DRAMs. Microelectronics Reliability 42(2): 157-173 (2002)

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