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A. F. Tasch Jr.

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1993
3EEC. Patrick Yue, Victor Martin Agostinelli Jr., Gregory Munson Yeric, A. F. Tasch Jr.: Improved universal MOSFET electron mobility degradation models for circuit simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 12(10): 1542-1546 (1993)
2EEVictor Martin Agostinelli Jr., Greg M. Yeric, A. F. Tasch Jr.: Universal MOSFET hole mobility degradation models for circuit simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 12(3): 439-445 (1993)
1990
1EEGregory Munson Yeric, A. F. Tasch Jr., Sanjay K. Banerjee: A universal MOSFET mobility degradation model for circuit simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 9(10): 1123-1126 (1990)

Coauthor Index

1Victor Martin Agostinelli Jr. [2] [3]
2Sanjay K. Banerjee [1]
3Greg M. Yeric [2]
4Gregory Munson Yeric [1] [3]
5C. Patrick Yue [3]

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