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| 1993 | ||
|---|---|---|
| 3 | EE | C. Patrick Yue, Victor Martin Agostinelli Jr., Gregory Munson Yeric, A. F. Tasch Jr.: Improved universal MOSFET electron mobility degradation models for circuit simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 12(10): 1542-1546 (1993) |
| 2 | EE | Victor Martin Agostinelli Jr., Greg M. Yeric, A. F. Tasch Jr.: Universal MOSFET hole mobility degradation models for circuit simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 12(3): 439-445 (1993) |
| 1990 | ||
| 1 | EE | Gregory Munson Yeric, A. F. Tasch Jr., Sanjay K. Banerjee: A universal MOSFET mobility degradation model for circuit simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 9(10): 1123-1126 (1990) |
| 1 | Victor Martin Agostinelli Jr. | [2] [3] |
| 2 | Sanjay K. Banerjee | [1] |
| 3 | Greg M. Yeric | [2] |
| 4 | Gregory Munson Yeric | [1] [3] |
| 5 | C. Patrick Yue | [3] |