| |
| 1993 | ||
|---|---|---|
| 2 | EE | C. Patrick Yue, Victor Martin Agostinelli Jr., Gregory Munson Yeric, A. F. Tasch Jr.: Improved universal MOSFET electron mobility degradation models for circuit simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 12(10): 1542-1546 (1993) |
| 1 | EE | Victor Martin Agostinelli Jr., Greg M. Yeric, A. F. Tasch Jr.: Universal MOSFET hole mobility degradation models for circuit simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 12(3): 439-445 (1993) |
| 1 | A. F. Tasch Jr. | [1] [2] |
| 2 | Greg M. Yeric | [1] |
| 3 | Gregory Munson Yeric | [2] |
| 4 | C. Patrick Yue | [2] |